BLY POWER TRANSISTOR Search Results

BLY53

Abstract: C1212 transistor BLY-53 "vhf,uhf transistor" C1212 bly power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLY-53/C12-12 Silicon NPN power VHF/UHF transistor BLY-53/C12-12 is designed for large signal amplifier and multiplier applications in portable and land mobile FM and AM equipment. Output Power: Frequency Range: Voltage: Package Type:

transistor c3-12

Abstract: C312 bly38 BLY-38 "vhf,uhf transistor" multiplier vhf C3-12
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLY-38/C3-12 Silicon NPN power VHF/UHF transistor BLY-38/C3-12 is designed for large signal amplifier and multiplier applications in portable and land mobile FM and AM equipment. Output Power: Frequency Range: Voltage: Package Type:

ICAN-6525

Abstract: ICAN-6602 ICAN-6572 CD4560B CD4519B 4049U CD4560
Contextual Info: Genera/ Operating and Application Considerations • • • • • • • • • O perating supply-voltage range Power dissipation and derating System noise considerations Power-source rules G ate-oxide protection networks Input signals and ratings Chip assem bly and storage

Contextual Info: STANDARD MOUNTING HARDWARE FOR POWER TRANSISTORS The mounting hardw are assem bly draw ings of Section A Figures 1 through 8 specify the individual hard­ w are items that are included in each mounting hardw are kit. Section A also references the p a ck a ge

TRIMMER capacitor 5-60 pF

Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
Contextual Info: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".

ULN2455A

Abstract: Integral ULN2455A ULN-2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln
Contextual Info: ULN-2435A, U LN-2445A, ULN-2455A AUTOM OTIVE LAM P MONITORS ULN-2435A, ULN-2445A, AND ULN-2455A AUTOMOTIVE LAMP MONITORS FEATURES • No Standby Power • Integral to Wiring Assem bly • Fall-Safe • Reverse Voltage Protected • Internal Transient Protection

BLW24

Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V

BLY93A

Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V

BLY78

Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V

blw 30 or bfw 30

Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V

BLW16

Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V

BLY93

Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V

BLY 33 transistor

Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
Contextual Info: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .

bly 2 10

Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Contextual Info: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz

TRANSISTORS

Abstract: 2SA POWER TRANSISTORS DIGITAL TRANSISTORS
Contextual Info: Introduction Introduction This data book provides data sheets for all leaded transistors that are manufactured by R O H M Co.,Ltd. All transistors are manufactured with R O H M ’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting

ali 3602

Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v
Contextual Info: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2802-1 ,PS2802-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he PS2802-1 and P S 2 8 0 2 -4 are o p tica lly c o u p le d iso lato rs silico n d a rlin g to n -co n n e cte d photo tra n sisto r in a p la stic SO P fo r

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2806-1 ,PS2806-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he PS2806-1 and P S 2 8 0 6 -4 are o p tica lly c o u p le d iso lato rs con ta in in g G aA s light em ittin g d iod es and an NPN

BUS48

Abstract: 5609 5609 transistor 2N6546 2N6547 CCC6547
Contextual Info: 6115950 MICROSEMI CORP/POWER 02E □5 p e j 00505 T '3 3 '1 3 ¡3 1 1 5 ^ 5 0 o n c m s o s ì CCC6547 TPTCÎ TECHNOLOGY 15 A, 850 V, NPN Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum

5609

Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678
Contextual Info: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 | 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au

Contextual Info: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum

all diodes ratings

Contextual Info: CONTENTS SMALL-SIGNAL DEVICES Introduction .2 BIPOLAR TRANSISTORS Introduction .26 Datasheets .27

Contextual Info: G lossary SI technologies 7.49 GLOSSARY A c tiv e Co m p o nen t: An electronic com ponent such as an 1C, transistor, or diode. A c tiv e Trim : The trim m in g of a circu it element resistor to obtain a specific functional A lu m in a : Alum inum Oxide. The prim ary com pound in Alum ina (ceram ic) substrates.

TRANSISTOR BJ 042

Contextual Info: -Jolitron ÄTTÄIL© Devices. Inc. MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER NPN EPI BASE POWER TRANSISTOR c rfl c 'l CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available