BM 2CA Search Results

P4N20

Abstract: ADT8A
Contextual Info: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000

FLU17ZM

Abstract: ED-4701 SM 1628
Contextual Info: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE

805-200-4

Abstract: hirschmann automotive turbocharger measurement b 647 44
Contextual Info: 647 SERIES Smart Rotary Actuators TYPICAL APPLICATIONS: Exhaust Valves Turbocharger Features/Benefits: • Brushless DC Reliability • Fast response, high torque output • On-board power switching • Auto calibration, soft stops • Diagnostic capability

Contextual Info: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm typ. High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product

Contextual Info: FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm typ. High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product

101S12

Abstract: FLU35ZME1
Contextual Info: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE

IM320

Abstract: fujitsu flu fujitsu gaas fet L-band
Contextual Info: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE

32c13

Contextual Info: I0 <2CAB@G0 B/<2/@20CL0F0CL00=B>@7<B I08E+0=@0C8+0 <>CB I0(7F0(72320(673:2 I0447173<1G0C>0B=02 I07F320AE7B167<504@3?C3<1G #30-'#/0#% #*/.020A,(&!/&+*. )3:31=;A/B/1=; &@=13AA0=<B@=: ,7@3:3AA0$3BE=@9

high power FET transistor s-parameters

Abstract: ED-4701 FLU35ZM High Power GaAs FET
Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE

Contextual Info: MB86831 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier GENERAL DISCUSSION

4BE67

Abstract: C356D E5 0D E7834
Contextual Info: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A

Contextual Info: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATA SHEET FUJITSU MAY 1997 • • • • FEATURES • 66MHz, 80MHz and 100 MHz versions each with clock doubling capability • SPARC high performance RISC architecture • 8 window, 136 word register file

Contextual Info: MB86831 FUJITSU SPARCIiteCPU O cto b e r 1996 F unction S pe cifica tion ADVANTAGES — Burst Mode Support — 6 Programmable Chip Select Functions CPU Core Advantages — 6 Programmable Wait State Controls • IU Integer Unit — Supports 8/16-bit Bus — 66MHz/80MHz/100MHz* operation

Contextual Info: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES Debug Support Unit 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier

HY512260TC50

Abstract: HY512260JC50 hy512260 HY512260SLRC HY512260JC Y9543 HY512260JC-50
Contextual Info: «HYUNDAI H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

2SK786

Abstract: fsjc EER 35 kd
Contextual Info: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss

pj 0189 diode

Abstract: STMicroelectronics DIODE marking code AE pj-25 diode smaj1 cg 88a SMA marking PJ pj 88 diode diodes STmicroelectronics marking DBK pj 936 SMAJ15A-TR
Contextual Info: SMAJ5.0A-TR,CArTR SMAJ188ArTR,CA-TR TRANS IL FEATURES • PEAK PULSE POWER : 400 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ JEDEC REGISTERED PACKAGE OUTLINE

diode s 30ca

Abstract: BM 2ca SMAJ15A-TR
Contextual Info: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANS IL FEATURES • PEAK PULSE PO W ER : 400 W (10/1 OOO^s ■ STAND OFF VOLTAG ERANG E : From 5V to 188V. ■ . ■ ■ UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSETIM E

fujitsu flu

Abstract: fujitsu gaas fet L-band
Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE

ELECTRONIC circuit diagram of digital hearing aid

Abstract: MDI81 sub-picture dct HM5216165 low cost hearing aid circuit diagram iso 13818-2 scr T103 CC1R601 t308 uPD4516161
Contextual Info: O V E R V IE W CHAPTER 1 1.1 1.2 FEATURES ♦ Supports system-I eve I navigation processing ♦ Supports D V D 1 .OVideo O b je c t VOB b it streams ♦ Decodes MPEG-2 and MPEG-1 video in real tim e ♦ Display: NTSC (720x480 @ 60 fps) and PAL (720x576 @ 50 fps)

61a3 mosfet

Abstract: m21 sot23 transistor fairchild aa11 L0DA A10 sot23-5 transistor m21 sot23 h1 sot23-5 honda 20 pin connector pinout ADSP-TS101S f21 diode sot23
Contextual Info: ADSP-TS101S EZ-KIT Lite Evaluation System Manual Revision 1.1, March 2004 Part Number 82-000635-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2004 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

Contextual Info: MB86831 FUJITSU S P A R C Iite S E R IE S 3 2 -B IT R IS C E M B E D D E D P R O C E S S O DATA S H E E T FE B R U A R Y 199 Built-in Internal Clock frequency multiplier circuit FEATURES Single vector trapping 66MH/., 80MHz and 100 MHz. versions each with

1AD1S

Contextual Info: "HYUNDAI H Y 5 1 1 8 2 6 0 J ïe r ie s 1 M x 1 6 - b it C M O S D R A M w it h 2 C A S &W PB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide