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    Rochester Electronics LLC BQ4013LYMA-70N

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013LYMA-70N Tube 298 11
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    Rochester Electronics LLC BQ4013MA-120

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-120 Tube 59 21
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    Texas Instruments BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Rochester Electronics BQ4013MA-85 115 1
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    Rochester Electronics LLC BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-85 Tube 11
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    Texas Instruments BQ4013YMA-70

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    BQ4013 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Type PDF
    bq4013 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013-120 Benchmarq nvSRAM Original PDF
    BQ4013-85 Benchmarq nvSRAM Original PDF
    BQ4013LY Texas Instruments 128 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4013LYMA-70 Texas Instruments BQ4013 - Texas Instruments BQ4013LYMA-70 Original PDF
    BQ4013LYMA-70N Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    BQ4013LYMA-70N Texas Instruments 128k x 8 NONVOLATILE SRAM, 3.3V Input Voltage 32-DIP MODULE -40 to 85 Original PDF
    BQ4013MA-120 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-120 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-120 Texas Instruments 128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    BQ4013MA-120 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    bq4013MA-120N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-70 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-70 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    bq4013MA-70N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-85 Texas Instruments BQ4013 - IC 128K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32, Static RAM Original PDF
    bq4013MA-85 Texas Instruments 128k x 8 Nonvolatile SRAM Original PDF
    BQ4013MA-85 Texas Instruments 128K x 8 NONVOLATILE SRAM Original PDF
    BQ4013MA-85 Texas Instruments 128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70 Original PDF
    bq4013MA-85N Texas Instruments NVRAM, 128K x 8 Nonvolatile SRAM Original PDF

    BQ4013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013

    Abstract: bq4013Y
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application


    Original     		PDF bq4013/Y 128Kx8 32-pin 34-pin bq40MS) 576-bit bq4013 bq4013Y

    bq4013YMA-120N

    Abstract: bq4013 bq4013Y Benchmarq BENCHMARQ MICROELECTRONICS bq4013ma
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year bq4013YMA-120N bq4013Y Benchmarq BENCHMARQ MICROELECTRONICS bq4013ma

    bq4013

    Abstract: bq4013MA-120 bq4013Y bq4013YMA-120
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013 bq4013MA-120 bq4013Y bq4013YMA-120

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 32-pin 576-bit

    bq4013

    Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit bq4013 bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    bq4013

    Abstract: bq4013Y
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application


    Original     		PDF bq4013/Y 128Kx8 32-pin 34-pin bq40MS) 576-bit static91 bq4013 LCR34 bq4013 bq4013Y

    bq4013

    Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit bq4013 bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    BO42

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ h 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq40l3 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq40l3 576-bit bq4013 bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013 BO42

    Untitled

    Abstract: No abstract text available
    Text: benchuarû bflE D microelec • 137flfllci DDOlSai 135 « B E N b q 4 0 1 3 /bq 4 0 1 3 Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized


    OCR Scan     		PDF 137flfllc 128Kx8 bq4013 576-bit 32-pin 10-year bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features > Data retention in the absence of power >- Automatic write-protection during power-uj/power- down cycles >• Industry-standard 32-pin 128K x 8 pinout >- Conventional SRAM operation; unlimited write cycles


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013YMA-120N bq4013

    Untitled

    Abstract: No abstract text available
    Text: b q 4 0 1 3 /b q 4 0 1 3 Y BENCHMARQ h 128Kx8 Nonvolatile SRAM Features General Description V Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. Ih e integral control circuitry and lithium energy


    OCR Scan     		PDF 128Kx8 bq4013 576-bit 32-pin 10-year bq4013-70 bq4013Y-70 bq4013 37flfln

    Untitled

    Abstract: No abstract text available
    Text: bq4013 /bq4013 Y fa BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. Ih e integral control circuitry and lithium energy


    OCR Scan     		PDF 32-pin 10-year bq4013 /bq4013 128Kx8 576-bit bq4013YMA-120N bq4013-70 bq4013Y-70

    bq4013ma

    Abstract: No abstract text available
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description > D ata retention in th e absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 32-pin 10-year bq4013 576-bit bq4013 bq4013ma

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in te g r a l co n tro l c irc u itry an d


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year bq4013YMA-120N bq4013

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y ili U N IT R O D E - 128Kx8 Nonvolatile SRAM Features General Description >• D ata rete n tio n for a t le a st 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral


    OCR Scan     		PDF 32-pin bq4013/Y 128Kx8 576-bit bq4013Y-70 bq4013YMA-120N bq4013 bq4013

    Untitled

    Abstract: No abstract text available
    Text: b bq4013/bq4013Y BENCHMARQ. 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit