BR 3050 Search Results

TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: SKT 130 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 130 Features  

2sc4106

Abstract: 2sC4106 transistor transistor 2sc4106 2sC4106 application notes 400V voltage regulator NPN Transistor 1A 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications

2SC4110

Abstract: NPN transistor for switching applications, 400V 400V voltage regulator
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose

Contextual Info: PXI Bluetooth BR+EDR+LE Measurement Suite The Bluetooth® measurement suite is a collection of software tools for generating and characterizing Bluetooth® signals during design validation or production test. The software is designed for use in conjunction with

SITAC AC Switches With Zero Voltage Switch

Abstract: SITAC telefunken ta 750 termocouple j BRT21H BRT21-H 83690
Contextual Info: 2 BR 21, 22, 23 Vishay Telefunken SITAC AC Switches With Zero Voltage Switch Without Zero Voltage Switch • AC switch with zero-voltage detector • Electrically insulated between input and output circuit • Microcomputer-compatible by very low trigger current

Contextual Info: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

Contextual Info: PD -96379 AUTOMOTIVE GRADE AUIRF2903Z HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD -96379 AUTOMOTIVE GRADE AUIRF2903Z HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Contextual Info: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: 2 BR 11, 12, 13 Vishay Telefunken SITAC AC Switches Without Zero Voltage Switch • AC switch without zero-voltage detector • Electrically insulated between input and output circuit • Microcomputer-compatible by very low trigger current • UL-tested file no. E 52744 , code letter "J"

ZXMP 6A17

Abstract: 6a17 ZXMP6A17K design ideas ZXMP6A17KTC TS16949 zxmp6A17
Contextual Info: Part no. ZXMP6A17K 60V DPAK P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.125 @ VGS= -10V 15.6 0.190 @ VGS= -4.5V 12.6 -60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for

6A08

Abstract: design ideas TS16949 ZXMN6A08K ZXMN6A08KTC ZXMN6A08
Contextual Info: Part no. ZXMN6A08K 60V DPAK N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= 10V 18.2 0.150 @ VGS= 4.5V 13.3 60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for

Lpp 97

Abstract: transil 428 54-135
Contextual Info: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60

k30a

Contextual Info: s TAIWAN SEMICONDUCTOR M BR F3035CT - M B R F3G150CT Isolated 30.0 AMPS. Schottky Barrier Rectifiers RoHS IT0-220AB CO M PLIANCE Features <r <• <• -v<• -v-v-v- UT.Z.lìi .il ¿¿»•.vu/ U9edcanrie9 P la 9 lio m a te r ia l U n c e iw r it e r s L a b o r a to r y

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

SN54LS32J

Abstract: 5962-9557401QCA 5962-9557401QDA SN5432J SN54S32J SN7432N
Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2009 PACKAGING INFORMATION Orderable Device Status 1 Package Type 5962-9557401QCA ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type 5962-9557401QDA ACTIVE CFP W 14 1 TBD A42 N / A for Pkg Type A42 N / A for Pkg Type

Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 4-Jun-2007 PACKAGING INFORMATION Orderable Device Status 1 Package Type 5962-9557401QCA ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type 5962-9557401QDA ACTIVE CFP W 14 1 TBD A42 N / A for Pkg Type A42 N / A for Pkg Type

Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 4-Jun-2007 PACKAGING INFORMATION Orderable Device Status 1 Package Type 5962-9557401QCA ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type 5962-9557401QDA ACTIVE CFP W 14 1 TBD A42 N / A for Pkg Type A42 N / A for Pkg Type

Contextual Info: SN5486, SN54LS86A, SN54S86 SN7486, SN74LS86A, SN74S86 QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES SDLS124 – DECEMBER 1972 – REVISED MARCH 1988 Copyright  1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

5962-9557401QCA

Abstract: 5962-9557401QDA SN5432J SN54LS32J SN54S32J SN7432N
Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 4-Jun-2007 PACKAGING INFORMATION Orderable Device Status 1 Package Type 5962-9557401QCA ACTIVE CDIP J 14 1 TBD A42 SNPB N / A for Pkg Type 5962-9557401QDA ACTIVE CFP W 14 1 TBD A42 N / A for Pkg Type A42 N / A for Pkg Type