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    BR 8 TRANSISTOR Search Results

    BR 8 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BR 8 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SC4931 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)8 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		2SC4931 PDF

    Contextual Info: 2SC4930 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)8 V(BR)CBO (V) I(C) Max. (A)70m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		2SC4930 PDF

    Contextual Info: SD1534-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)5.5 Absolute Max. Power Diss. (W)218 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		SD1534-8 PDF

    Contextual Info: LTE42012R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800 Absolute Max. Power Diss. (W)8¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		LTE42012R PDF

    Contextual Info: SD1540-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)22 Absolute Max. Power Diss. (W)875 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		SD1540-8 PDF

    Contextual Info: SD1526-8 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)21 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		SD1526-8 PDF

    Contextual Info: 2SK286 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100‚ Minimum Operating Temp (øC)


    Original     		2SK286 PDF

    Contextual Info: 2SK175 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		2SK175 PDF

    Contextual Info: MTP2P45E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65


    Original     		MTP2P45E PDF

    Contextual Info: MJD122-1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.1k


    Original     		MJD122-1 PDF

    Contextual Info: ZVN4206GV Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)


    Original     		ZVN4206GV PDF

    Contextual Info: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nà PDF

    Contextual Info: AT41511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)0.2m @V(CBO) (V) (Test Condition)8


    Original     		AT41511 PDF

    Contextual Info: 2SB886 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)8 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k


    Original     		2SB886 Freq20M PDF

    Contextual Info: KSH127 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1k h(FE) Max. Current gain.12k


    Original     		KSH127 PDF

    Contextual Info: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


    Original     		IXGH30N60U1 Junc-Case620m delay100nà time200nà time500nà PDF

    Contextual Info: ECG2315 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)200 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		ECG2315 PDF

    Contextual Info: MJD127-1 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.1k


    Original     		MJD127-1 PDF

    Contextual Info: 2SD1196 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)8 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k


    Original     		2SD1196 Freq20M PDF

    Contextual Info: KSH122 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)8 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1k h(FE) Max. Current gain.12k


    Original     		KSH122 PDF

    Contextual Info: BFR540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8


    Original     		BFR540 PDF

    Contextual Info: ZVN4206G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55


    Original     		ZVN4206G PDF

    Contextual Info: BFG540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8


    Original     		BFG540 PDF

    Contextual Info: CA3246M Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)8 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		CA3246M PDF