transistor 9014
Abstract: BR 9014 BR 9014 c transistor 9014 c BR 9014 transistor "transistor" 9014 BR 9014 C TRANSISTOR C 9014 transistor 9014 to-92 data sheet transistor 9014 NPN
Text: NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V BR CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified
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100mA,
30MHz
transistor 9014
BR 9014
BR 9014 c
transistor 9014 c
BR 9014 transistor
"transistor" 9014
BR 9014 C TRANSISTOR
C 9014 transistor
9014 to-92
data sheet transistor 9014 NPN
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BR 9014
Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014
Text: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range
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S9014
BR 9014
BR 9014 c
BR 9014 transistor
transistors BR 9014
TRANSISTOR 9014
S9014
V. 9014 c
9014
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BR 9014
Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector
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br 9015
Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
br 9015
pnp transistor 9015
transistor 9015 c
9015 pnp
BR 9014
transistor c 9015
9015 transistor
C 9015 transistor
transistor 9015
BR 9015 C
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BR 9015
Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
BR 9015
transistor 9015 c
transistor c 9015
BR 9015 C
pnp transistor 9015
transistors BR 9015
9015 pnp
transistor 9015
9015* Transistor
C 9015 transistor
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BR 9014
Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
BR 9014
BR 9014 transistor
BR 9015
BR 9014 c
transistors BR 9015
transistor 9014 NPN
9015 PNP
transistor 9015 c
transistor c 9015
TS 9015
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transistor c 9015
Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
transistor c 9015
BR 9014
BR 9015
BR 9014 transistor
transistor 9015 c
9015 PNP
pnp transistor 9015
BR 9014 C TRANSISTOR
transistors BR 9015
9015 TO-92
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BR 9014
Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014 transistor
Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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Schottky barrier sot-23 40V
Abstract: No abstract text available
Text: WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OD-123+
FM120-M+
9014xLT1
FM1200-M
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
Schottky barrier sot-23 40V
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BR 9014
Abstract: BR 9014 C AK P12
Text: SC73C1402 4 MCU MASK SC73C1402 CMOS 4 MCU SSOP-20-300-0.65 SC73C1402 24 SOP-20-300-1.27 20 SSOP-24-300-0.65 * 2.0V – 4.0V * < 1µA * ROM 2k x 9 bits * RAM * * SOP-24-375-1.27 1k 16 × 4 bits 10 20 15 / I/O P53 * fosc 300KHz ~ 2MHz 2MHz SOP-24-375-1.27
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SC73C1402
SSOP-20-300-0
OP-20-300-1
SSOP-24-300-0
OP-24-375-1
300KHz
SC73C1402B
BR 9014
BR 9014 C
AK P12
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Untitled
Abstract: No abstract text available
Text: PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D
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IRFBC30S/L
IRFBC30S)
IRFBC30L)
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V
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1016A
IRFBC40S/L
IRFBC40S)
IRFBC40L)
08-Mar-07
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3 pin crystal oscillator 3,64mhz
Abstract: SC-73 alu project 4BIT Silan label
Text: SC73C1402 4-BIT MCU FOR REMOTE CONTROLLER MASK TYPE DESCRIPTION SC73C1402 is one of Silan’ s 4-bit CMOS single-chip microcontrollers for infrared remote control transmitters (IRCTs). It can SOP-20-300-1.27 be implemented in various IRCT circuits by mask option.
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SC73C1402
SC73C1402
OP-20-300-1
OP-20-375-1
SSOP-20-300-0
300KHz
3 pin crystal oscillator 3,64mhz
SC-73
alu project 4BIT
Silan label
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AN-994
Abstract: IRFBC30 IRFBC30L IRFBC30S
Text: PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D
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IRFBC30S/L
IRFBC30S)
IRFBC30L)
12-Mar-07
AN-994
IRFBC30
IRFBC30L
IRFBC30S
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AN-994
Abstract: IRFBC40 IRFBC40L IRFBC40S
Text: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V
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1016A
IRFBC40S/L
IRFBC40S)
IRFBC40L)
12-Mar-07
AN-994
IRFBC40
IRFBC40L
IRFBC40S
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IRFBC30A
Abstract: No abstract text available
Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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1889A
IRFBC30A
O-220AB
12-Mar-07
IRFBC30A
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Untitled
Abstract: No abstract text available
Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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1889A
IRFBC30A
O-220AB
08-Mar-07
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IRFBC40A
Abstract: No abstract text available
Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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-91885A
IRFBC40A
O-220AB
12-Mar-07
IRFBC40A
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Untitled
Abstract: No abstract text available
Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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-91885A
IRFBC40A
O-220AB
08-Mar-07
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fr5305
Abstract: fr9014 BR 9014
Text: I S S ' "“ « •'•» » » « F it, Id *D V BR DSS Part Drain-to-Source Breakdown Voltage Number M Continuous R DS(on) Continuous R Pd Drain Current On-State Drain Current Max. Thermal Max. Power 100° Resistance 25°C Resistance 1 Dissipation 1 rc/w )
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak
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F10120H/D
MRF10120H*
MRF10120HX
MRF10120HXV
MRF10120HS
MRF10120HC
355C-02
1PHX31251-1
MRF10120H/D
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