Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BR B772 Search Results

    BR B772 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SB772-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation

    BR B772 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    br b772

    Abstract: b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF O-126 O-126 -100mA 10MHz br b772 b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp

    b772 p

    Abstract: br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF -100mA 10MHz b772 p br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		PDF O-126 290TYP 090TYP

    B772

    Abstract: TRANSISTOR br b772 TRANSISTOR B772 sot-89
    Text: SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-89 OT-89 -100mA 10MHz B772 TRANSISTOR br b772 TRANSISTOR B772 sot-89

    br b772

    Abstract: TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br
    Text: B772 B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF -100mA 10MHz br b772 TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br

    transistor b722

    Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
    Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)


    Original     		PDF O-126 O-126 transistor b722 transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p

    b772 p

    Abstract: C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage


    Original     		PDF OT-89 OT-89 -100mA 10MHz b772 p C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89

    br b772

    Abstract: TRANSISTOR b772 b772 TRANSISTOR br b772 b772 transistor b772 pnp pnp b772 B772 equivalent B772 TO-252 TO-251 B772
    Text: B772 0. 5 1¡ À 0 . 03 5. 50¡ 0 À. 10 5¡ ã 14. 70 TRANSISTOR PNP FEATURES 5¡ ã 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation BASE 2. 3 0¡ À 0. 05 2. 3 0¡ À 0. 0 5 1 . 20 0. 51 ¡ À 0 . 03 123 2. W(Tamb=25℃) COLLECTOR


    Original     		PDF -100mA 10MHz br b772 TRANSISTOR b772 b772 TRANSISTOR br b772 b772 transistor b772 pnp pnp b772 B772 equivalent B772 TO-252 TO-251 B772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251 O-251 10MHz

    b772

    Abstract: TRANSISTOR b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-252 O-252 10MHz b772 TRANSISTOR b772

    TO-251 B772

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251 O-251 -100A 10MHz TO-251 B772 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772

    B772

    Abstract: br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units


    Original     		PDF OT-89 OT-89 -10mA -100A 10MHz B772 br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent

    br b772

    Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-126 O-126 -10mA -100A 10MHz br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126

    b772

    Abstract: BR B772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-252 O-252 10MHz b772 BR B772

    b772s

    Abstract: transistors b772s
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TO-92 TRANSISTOR PNP FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF B772S -100A 10MHz b772s transistors b772s

    b772s

    Abstract: No abstract text available
    Text: B772S Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features — Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage


    Original     		PDF B772S -100A -10mA -100A 10MHz b772s

    br b772

    Abstract: TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f
    Text: B772 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLETOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Low speed switching 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30


    Original     		PDF OT-89 OT-89 -100A -10mA -100A 10MHz br b772 TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 B772S TRANSISTOR PNP 1. EMITTER FEATURES Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF B772S -10mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage


    Original     		PDF O-126 O-126 -10mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89-3L FEATURES Low speed switching 1 2 3 1. BASE 2. COLLETOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value


    Original     		PDF OT-89-3L OT-89-3L -10mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） FEATURES Power dissipation : 625 PCM TO-92 1. EMITTER m W（Tamb=25℃） 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF -100mA 10MHz

    B772 TRANSISTOR

    Abstract: br b772 TRANSISTOR b772 b772 TRANSISTOR br b772
    Text: B772 Transistor PNP 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features — Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF O-252-2L -100A -10mA -100A 10MHz B772 TRANSISTOR br b772 TRANSISTOR b772 b772 TRANSISTOR br b772

    BR B772

    Abstract: b772 npn B772 TRANSISTOR b772 TRANSISTOR br b772 b772 china B772 TO-92 1A60
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn B772 TRANSISTOR NPN TO-92 FEATURES Low speed switching 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF -100A -100mA 10MHz BR B772 b772 npn B772 TRANSISTOR b772 TRANSISTOR br b772 b772 china B772 TO-92 1A60

    b772 q

    Abstract: B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772
    Text: TO-126 Plastic-Encapsulate Transistors^ B772 TRANSISTO R PNP F EATURES Power dissipation TO-126 1.25W (Tamb=25°C) P cm; C o llecto r current 1 .E M IT T E R I cm ; -3 A 2 .COLLECTOR -base voltage 3 . BASE V(BR)CBO: -4 0 V O perating and storage ju n ctio n tem perature range


    OCR Scan     		PDF O-126 O-126 b772 q B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772