BR MARKING Search Results

Contextual Info: RF SIGNAL CHOKE 4.5 ±0.5 8.0+1/-0.5 6.5 MAX. 6.0 ± 0.5 6.0 ± 0.5 4.5 ± 0.5 3.0+1/-0.5 0.5 ±0.05 Unit: mm Marking Color Dot Part Number. 1 2 3 3361I-090 B W B 3361I -100 BR B B 3361I -110 BR BR B 3361I -120 BR R B 3361I -130 BR O B 3361I -140 BR Y B 3361I -150

marking br

Abstract: 1mm pitch BGA br27
Contextual Info: NETWORKS Thick Film R-Network BGA Resistor Package BR STRUCTURE 1 2 3 4 5 6 7 8 W IDENTIFICATION Type BODY COLOR MARKING BR Black All these products have Pb-free terminations and meet RoHS requirements White, Alpha Numeric BR 27 A P T TEB 1002 F PRODUCT CODE

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

040-H

Abstract: npn, transistor, sc 107 b
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

sc 107 transistor

Abstract: NPN TRANSISTOR SC-70 23marking
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

sot-323 transistor marking code 15

Abstract: sc 107 transistor NPN TRANSISTOR SC-70
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC

btp 128 550

Abstract: AXP 209 TPSMP6.8A
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)

ZXTP25140BFH

Abstract: ZXTP25140BFHTA
Contextual Info: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to

npn, transistor, sc 107 b

Abstract: MOTOROLA DATE CODE transistor
Contextual Info: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO

relay 12v 100A

Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

ZXTN2

Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

ZXTN25060BFH

Abstract: ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

marking 056

Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Contextual Info: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

IEC 60603-7-51

Contextual Info: 24 Tol. <500 ≥500 10 20 >1500 25 >5000 40 >8000 60 >15000 100 200 Paar 2 pair 2 W-O 1 O 2 3 3 Paar 1 pair 1 4 W-BL 5 G 6 W-BR 7 4 Paar 4 pair 4 BL BR 5 6 7 S >50000 >100000 300 500 Paar 3 pair 3 G W-O W-BR Paar 4 pair 4 BR Paar 2 pair 2 O BL Paar 1 pair 1

MSB710QT1

Abstract: marking code LG transistors
Contextual Info: MSB710-QT1 MSB710-RT1* CASE 318D-03, STYLE 1 MAXIMUM RATINGS |TA = 25 Cl Rating Value Unit Collector-Base Voltage v BR CBO -3 0 Vdc Collector-Emitter Voltage V(BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'c -5 0 0 mAdc 'C(P) -1 Ade Symbol Max Unit

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

MSD602

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Symbol V BR CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 500 Unit Vdc Vdc Vdc mAdc IC(P) 1.0 Adc Symbol PD TJ T stg Max 200 150 –55 ~ +150

Contextual Info: MSD1328-RT1* CASE 318D-03, STYLE 1 M A XIM U M R ATINGS TA = 25 C C O LLEC TO R 3 Rating Symbol Value Unit n Collector-Base Voltage v (BR)CBO 25 Vdc Collector-Emitter Voltage v (BR)CEO 20 Vdc Emitter-Base Voltage v E(BR)BO 12 Vdc Collector Current-Continuous

MSD602

Abstract: 1N711
Contextual Info: NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 1 2 2 BASE 1 EMITTER Symbol V BR CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 500 Unit Vdc Vdc Vdc mAdc IC(P) 1.0 Adc Symbol PD TJ T stg Max 200 150 –55 ~ +150 Unit mW °C °C

marking BR

Abstract: KTX321U br marking br mark
Contextual Info: SEMICONDUCTOR KTX321U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BR 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BR KTX321U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.