Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range
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S8550
-50mA
-500mA
-500mA,
-20mA
30MHz
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B9D TRANSISTOR
Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
Text: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW(Tamb=25℃) Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR
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S8550LT1
OT--23
225mWTamb
150mA
500mA
500mA,
B9D TRANSISTOR
PNP Transistor b9d
transistor B9C
B9C transistor
PNP Epitaxial Silicon Transistor sot-23
S8550LT1
hfe pnp transistor
500ma 40v pnp
sot23/B9C transistor
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s8550
Abstract: s8550 PNP TRANSISTOR S8550 DATASHEET S8550 transistor S8550 TO-92
Text: TRANSISTOR PNP S8550 TO-92 FEATURES Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 CHARACTERISTICS( (Tamb=25℃ ℃ ELECTRICAL Parameter Collector-base
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S8550
-100A
500mA
-500mA,
-100mA
-20mA
30MHz
s8550
s8550 PNP TRANSISTOR
S8550 DATASHEET
S8550 transistor
S8550 TO-92
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transistor s8550
Abstract: transistor TO-92 S8550 S8550 S8550 equivalent s8550 transistor 01ah BR S8550 s8550 d h
Text: S8550 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.5 A Collector-base voltage V (BR)CBO :-40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C
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S8550
I-160
transistor s8550
transistor TO-92 S8550
S8550
S8550 equivalent
s8550 transistor
01ah
BR S8550
s8550 d h
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s8550 transistor
Abstract: transistor s8550 S8550 BR S8550 S8550 equivalent S8550 DATASHEET S8550 D s8550transistor S-8550 s8550 c
Text: S8550 S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃
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S8550
-50mA
-500mA
-500mA,
-20mA
30MHz
s8550 transistor
transistor s8550
S8550
BR S8550
S8550 equivalent
S8550 DATASHEET
S8550 D
s8550transistor
S-8550
s8550 c
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sot-23 Marking 2TY
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8550LT1 1. BASE TRANSISTOR( PNP ) 2. EMITTER 3. COLLECTOR Parameter Symbol 0.95 0.4 1.9 0.95 2.4 1.3 2.9 Power dissipation
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OT-23
S8550LT1
037TPY
950TPY
550REF
022REF
sot-23 Marking 2TY
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transistor TO-92 S8550
Abstract: S8550 transistor S8550 S8550 equivalent transistor s8550 transistors S8550 S8550 DATASHEET BR S8550 equivalent S8550
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR PNP TO-92 1. EMITTER FEATURE Excellent hFE linearity 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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S8550
-100uA,
-50mA
-500mA
-500mA,
-20mA,
30MHz
transistor TO-92 S8550
S8550 transistor
S8550 equivalent
transistor s8550
transistors S8550
S8550 DATASHEET
BR S8550
equivalent S8550
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j3y transistor
Abstract: .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
S8050
OT-23
S8550
500mA
30MHz
j3y transistor
.j3y
SOT-23 J3Y
S8050 SOT-23
transistor J3Y
s8050
MARKING J3Y
.j3y transistor
BR S8050
transistor S8050
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j3y transistor
Abstract: SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=1.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
S8050
OT-23
S8550
500mA
30MHz
j3y transistor
SOT-23 J3Y
S8050 SOT-23
transistor J3Y
S8050
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SOT-23 J3Y
Abstract: j3y transistor transistor j3y
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
S8050
OT-23
S8550
500mA
30MHz
SOT-23 J3Y
j3y transistor
transistor j3y
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Transistor 2TY
Abstract: Transistor S8550 2TY sot-23 Marking 2TY marking 2TY S8050 2TY S8550 2TY 2ty transistor SOT-23 2TY Transistor+2TY 2ty sot23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
S8550
S8050
-50mA
-500mA
-500mA,
Transistor 2TY
Transistor S8550 2TY
sot-23 Marking 2TY
marking 2TY
S8050 2TY
S8550 2TY
2ty transistor
SOT-23 2TY
Transistor+2TY
2ty sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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S8050
S8550
500mA
500mA,
30MHz
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Transistor S8550 2TY
Abstract: S8050 2TY transistor s8550 transistors s8550 S8550 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
S8550
S8050
-50mA
-500mA
-500mA,
Transistor S8550 2TY
S8050 2TY
transistor s8550
transistors s8550
S8550 transistor
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Transistor S8550 2TY
Abstract: marking 2ty Transistor 2TY sot-23 Marking 2TY .2TY S8050 2TY 2TY transistor s8550 transistor 2ty marking S8550 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
S8550
S8050
-100A,
-50mA
-500mA
-500mA,
Transistor S8550 2TY
marking 2ty
Transistor 2TY
sot-23 Marking 2TY
.2TY
S8050 2TY
2TY transistor
s8550 transistor
2ty marking
S8550 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8550 TRANSISTOR PNP 1. EMITTER FEATURE Excellent hFE Linearity 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit
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S8550
-100uA,
-50mA
-500mA
-500mA,
-20mA,
30MHz
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BR S8550
Abstract: s8550 transistors S8550 s8550 to92
Text: S8550 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25
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S8550
-500mA
-500mA,
-50mA
-20mA,
-100uA,
-50mA
BR S8550
transistors S8550
s8550 to92
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sot-23 Marking 2TY
Abstract: Transistor S8550 2TY marking 2TY SOT-23 2Ty
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
S8550
S8050
-50mA
-500mA
-500mA,
sot-23 Marking 2TY
Transistor S8550 2TY
marking 2TY
SOT-23 2Ty
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Transistor 2TY
Abstract: Transistor S8550 2TY .2TY sot-23 Marking 2TY .2ty transistor 2ty transistor 2TY marking s8550 sot-23 S8050 2TY S8550 sot 23
Text: S8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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S8550
OT-23
OT-23
S8050
-500mA
-500mA,
-50mA
-20mA
Transistor 2TY
Transistor S8550 2TY
.2TY
sot-23 Marking 2TY
.2ty transistor
2ty transistor
2TY marking
s8550 sot-23
S8050 2TY
S8550 sot 23
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j3y transistor
Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
Text: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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S8050
OT-23
OT-23
S8550
500mA
30MHz
j3y transistor
.j3y
SOT-23 J3Y
.j3y transistor
S8050 SOT-23
transistor J3Y
J3Y Transistor MARKING
SOT-23 J3Y npn
J3Y marking
MARKING J3Y
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transistor TO-92 S8550
Abstract: s8550 transistor s8550 BR S8550 S8550 transistor
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A
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S8550
625Watts
-55OC
100uAdc,
500mAdc,
50mAdc)
transistor TO-92 S8550
s8550
transistor s8550
BR S8550
S8550 transistor
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j3y transistor
Abstract: SOT-23 J3Y S8050
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
S8050
OT-23
S8550
500mA
30MHz
j3y transistor
SOT-23 J3Y
S8050
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s8550 npn
Abstract: S8050 npn BR S8050 npn s8050 d3 s8050 NPN S8550 npn s8050 d br s8050 d
Text: S8050 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage
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S8050
S8550
500mA
500mA,
30MHz
s8550 npn
S8050 npn
BR S8050
npn s8050 d3
NPN S8550
npn s8050 d
br s8050 d
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transistor s8550
Abstract: BR S8550 s8550 transistor
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.
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S8550
625Watts
-55OC
100uAdc,
500mAdc,
50mAdc)
100mAdc)
transistor s8550
BR S8550
s8550 transistor
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2TY marking
Abstract: s8550lt1 marking 2TY 8550LT1 8550L
Text: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:
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8550LT1
S8550LT1
S8550LT1
2TY marking
marking 2TY
8550L
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