BRANDING 302 Search Results

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

Contextual Info: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4798.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V

AN7254

Abstract: AN7260 AN9321 AN9322 HUF76407DK8 HUF76407DK8T MS-012AA TB334
Contextual Info: HUF76407DK8 Data Sheet October 1999 File Number 4712.4 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V

Contextual Info: ITF87072DK8T TM Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V

AN7254

Abstract: AN9321 AN9322 HUF75831SK8 HUF75831SK8T MS-012AA TB370
Contextual Info: HUF75831SK8 TM Data Sheet March 2000 File Number 4796.1 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

HUF75631SK8

Abstract: HUF75631SK8T MS-012AA TB334 AN7254 AN7260 AN9321 AN9322
Contextual Info: HUF75631SK8 Data Sheet October 1999 File Number 4785 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.039Ω, VGS = 10V BRANDING DASH 5 1 2 3 • Simulation Models - Temperature Compensated PSPICE and SABER

mosfet 4812

Abstract: mosfet 4812 datasheet RG-161 Thermal Resistance vs. Mounting Pad Area AN7254 AN7260 ITF87072DK8T MS-012AA TB370
Contextual Info: ITF87072DK8T TM Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V

AN7254

Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
Contextual Info: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: 8.375" FIBER OPTICS Tight Buffer Distribution Interlock Armored Cable A fiber cable for the toughest applications General Cable’s Tight Buffer Distribution Interlock Armored Cable is a Type OFCR/OFCP fiber premise cable that is flexible and easy to use. It eliminates the

BAS 40 relia

Contextual Info: H M y / r # / C « * »« r n. a u . ! r O S G / 7 7 l B B J B S B B a 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v ilie , P A 1 8 9 3 6 -1 0 1 3 T e l: 2 1 5 6 3 1 -9 8 4 0 S D 1 8 6 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS

Contextual Info: OUR BEST IDEAS COME FROM YOU You asked for more armored cable options with shorter lead times, and we responded. General Cable now offers armoring in-house for an array of Datacom, Fiber Optic, and Electronic cables, resulting in shorter lead times and increased capabilities.

wireless vga camera circuit

Abstract: zoran Color Codes surveillance rgb to usb circuit datasheet YUV12 YUV422 ZR36506 "Camera processor" ZORAN zoran usb video camera
Contextual Info: Solutions USBvision III ZR36506 Product Brief Zoran Corporation 3112 Scott Boulevard Santa Clara, CA 95054-3317 on a Chip T e l 408.919.4 1 1 1 Fax 408.919.4122 www.zoran.com The One Chip Solution for Multi-Mode Digital Cameras The USBvision III ZR36506 is a revolutionary, multi-mode, digital

DO214AA

Abstract: SG-250 mount
Contextual Info: SGT Series Semiconductor February 1999 Data Sheet PRELIMINARY Surface Mount Surgector Transient Voltage Suppressors File Num ber 4632 Features The Harris S urgector fam ily has been extended to include a series of tw o-term inal surface mount devices as described

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334
Contextual Info: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET File Number 4012.5 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

AN9321

Abstract: AN9322 MS-012AA RF1K49156 RF1K4915696 AN7254 AN7260 TB334
Contextual Info: RF1K49156 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET File Number 4011.3 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49221 RF1K4922196 TB334 nmos 8138
Contextual Info: RF1K49221 Data Sheet August 1999 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET File Number 4314.1 Features • 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

AD8312-EVAL

Abstract: AD8361 circuit AD8312 AD8312ACPZ-WP AD8313 AD8361
Contextual Info: 100 MHz−2.7 GHz, 45 dB RF Log Detector AD8312 Preliminary Technical Data Its high sensitivity allows measurement at low power levels, thus reducing the amount of power that needs to be coupled to the detector. It is essentially a voltage-responding device, with a

AD8567A

Contextual Info: a FEATURES Single-Supply Operation: 4.5 V to 16 V Input Capability Beyond the Rails Rail-to-Rail Output Swing Continuous Output Current: 35 mA Peak Output Current: 250 mA Offset Voltage: 10 mV Slew Rate: 6 V/␮s Unity Gain Stable with Large Capacitive Loads

ITF86172SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)

simulation models

Abstract: ITF86182SK8T MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4797.2 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.0115Ω, VGS = −10V Packaging (ITF86 - rDS(ON) = 0.016Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)

ta7610

Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

SE7051

Abstract: SE7051L Agilent 3070 Manual PEAK TRAY tx qfn BBY58-03W modulator OFDM 4352b WiMAX RF CMOS Transceiver SE7051L10 vga to av converter diagram
Contextual Info: SE7051L10 200 – 600 MHz Transceiver with Dual Synthesizer Applications Product Description ƒ ƒ ƒ The SE7051L10 is a highly integrated low noise, high linearity transceiver that includes both RF 2850 to 3350 MHz and IF (200 to 600 MHz) synthesizers. The

AD8565

Abstract: AD8565AKS AD8566 AD8566ARM AD8567 AD8567ACP AD8567ARU RU-14 AD8567A 110MAX
Contextual Info: a FEATURES Single-Supply Operation: 4.5 V to 16 V Input Capability Beyond the Rails Rail-to-Rail Output Swing Continuous Output Current: 35 mA Peak Output Current: 250 mA Offset Voltage: 10 mV Slew Rate: 6 V/␮s Unity Gain Stable with Large Capacitive Loads