BRANDING EA Search Results

A-5962-6052-80

Abstract: avago marking -2 avago marking Avago Technologies
Contextual Info: PCN: A05-001-SPG-0A Product Change Notice Issue Date: 30 Nov 2005 Change Type: Product Marking, package labeling and shipping documentation change – Change from Agilent Technologies’ branding and logo to Avago Technologies branding and/or logo. Parts Affected:

Contextual Info: Datasheet LGK-3901 3G/HD/SD Channel Branding Processor Promote your brand and efficiently deliver your channels. The Densité LGK-3901 from Grass Valley, a Belden Brand, is a low cost, modular channel branding processor, capable of inserting up to five layers of graphics into 3G/HD/SD. Three of the keying layers can be

MS-018

Abstract: MS-016 MS-026
Contextual Info: Package Drawing Designator: EA Type: 28-pin, square PLCC with internally fused pins for thermal dissipation 12.45 ±0.13 11.51 ±0.08 0.32 0.19 5.21 ±0.36 12.45 ±0.13 11.51 ±0.08 NNNNNNNNNNNN YYWW LLLLLLLLLLLL 1 5.21 ±0.36 A B 28 1 Standard Branding Reference View

MS-026 TQFP

Abstract: MS-016 MS-018 MS-026
Contextual Info: Package Drawing Designator: EA Type: 28-pin, square PLCC with internally fused pins for thermal dissipation 12.45 ±0.13 11.51 ±0.08 0.32 0.19 5.21 ±0.36 12.45 ±0.13 11.51 ±0.08 NNNNNNNNNNNN YYWW LLLLLLLLLLLL 1 5.21 ±0.36 A B 28 1 Standard Branding Reference View

Wacker

Abstract: Branding
Contextual Info: Branding for Emerging Service Providers The Next Generation Networks Teleconference Series for Service Provider Executives Van C. Smick Vice President Global Brand Management Nortel Networks • Van C. Smick is responsible for the overall strategy and implementation of Nortel

AN9321

Abstract: HUFA75631SK8 HUFA75631SK8T MS-012AA TB334 109E diode
Contextual Info: HUFA75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

AN9321

Abstract: AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334 238e 109E diode
Contextual Info: HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

sw-spdt

Abstract: C1242 GSM LNA C128 STB7003 SW SPDT c124 s c1281 SW SPDT FOOTPRINT
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS

Contextual Info: HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH

kp 1006

Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
Contextual Info: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)

STM901-30

Contextual Info: STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS . . . LINEAR POWER AMPLIFIER 860 - 900 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS POUT = +44.7 dBm PEP GAIN = 35 dB MIN. CASE STYLE H141 ORDER CODE STM901-30 BRANDING STM901-30 PIN CONNECTION DESCRIPTION

SW SPDT

Abstract: C128 STB7003 C124 kit C124-2 c1281
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS

Contextual Info: STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS . . . LINEAR POWER AMPLIFIER 860 - 900 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS P OU T = +44.7 dBm PEP GAIN = 35 dB MIN. CASE STYLEH141 ORDER CODE STM901-30 BRANDING STM901-30 PIN CONNECTION DESCRIPTION

Contextual Info: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2

AN9321

Abstract: AN9322 HUF76407DK8 HUF76407DK8T MS-012AA TB334 76407dk8
Contextual Info: HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

AN7254

Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Contextual Info: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V

AN7254

Abstract: ITF86172SK8T MS-012AA TB370 vj04
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = −10V - rDS(ON) = 0.023Ω, VGS = −4.5V

Contextual Info: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

AN9321

Abstract: HUFA76407DK8 HUFA76407DK8T MS-012AA TB334 diode 106E
Contextual Info: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2

AN7254

Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Contextual Info: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2000 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V

AN7254

Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Contextual Info: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V

76407DK8

Abstract: AN9321 HUFA76407DK8 HUFA76407DK8T MS-012AA TB334
Contextual Info: HUFA76407DK8 Data Sheet November 2000 File Number 4971 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH