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GS3030

Contextual Info: mCROPAC INDUSTRIES INC 45E D B bllELMO OQDQà'ìO 1 S3 fiPI SILICON PHOTODARLINGTON “ PIGTAIL” 61010 TYPE GS 3030 G E N E R A L DESCRIPTION MINITURE PHOTODARLINGTON WITH NARROW ANGUALR RESPONSE GLASS/METAL W ELDED HERMETIC PACKAGED Mii 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a lensed coaxial package designed to be

MJ15001

Abstract: MJ15002 200 watts audio power amp transistors 200 watts audio amp power transistors 3576 transistor
Contextual Info: 4 1 MOTOROLA í 4 . G i r PNP NPN Ml15001 MJ15002 SEMICONDUCTOR TECHNICAL DATA 15 AM PER E POWER TRA N SISTO R S CO M PLEM EN TARY SILICO N CO M PLEM EN TARY SILICO N POWER TRA N SISTO R S 140 V O L T S 2 00 W A T T S The M J 15001 and M J 15002 are EpiBase power transistors designed

1N5189

Abstract: HA 1342
Contextual Info: 1N5186 thru 1N5190 M¡erosemi Corp. y Tne & o de experts ! SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 714 979-8220 FAST SWITCHING RECTIFIERS FEATURES • M IC R O M IN IA T U R E P A C K A G E • VO ID LE SS H E R M E T IC A LLY S E A L E D G L A S S P A C K A G E

Contextual Info: MOTOROLA SC 6367254 IXSTRS/R FJ MOTOROLA SC T b CXSTRS/R F D f ~ | h 3 t 7 2 S 4 O O Ô 1 1 1 D D _ 96D 8 1 1 1 0 T - 3 3 MOTOROLA 1 5 PNP NPN MJ15001 Mi15002 SEMICONDUCTOR TECHNICAL DATA 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS

Contextual Info: d l C R O P A C I N D U S T R I E S INC M5ED B fcliab4D 0 G Q 0 0 Ì 2 S B MPI SILICON PHOTOTRANSISTOR 61048 TYPE GS 4123 G E N E R A L DESCRIPTION LARGE SENSITIVE AREA TO-46 HERMETIC PACKAGE Mii 61048 is an N-P-N silicon Phototransistor featuring a large (.060 by .060) sensitive area, mounted in aflatwindowed TO-46 package.

Contextual Info: MICROPAC INDUSTRIES INC 1SE D • T-^l-bZ bllEbMD 00DDt3fl 5 ■ J V iM . m n > SILICON PHOTO TRANSISTOR 610S2 TYPE GS 4123 O P T O E L E C T R O N IC P R O D U C T S . D IV IS IO N G E N E R A L D E S C R IP T IO N LARGE SENSITIVE AREA TO-46 H ER M ETIC PACKAGE

Contextual Info: Tb MOTOROLA SC -CXSTRS/R F> f 6387254 M O JO RO LA SÇ X S T R S / R DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEMICONDUCTOR TECHNICAL DATA ' " ^ É S D e s ig n e r ’ s 'O ìa t a ^ S h e e t ¿ ¿ g fc s s * '- 8 AMPERE

1N4938

Abstract: 1N4938-1 979-K220 734 marking
Contextual Info: \ikká4S 1N 4938and 1N4938-1 Mierosemi Corp. 1J Ç The d ’OdP e x p e rts SANTA ANA, CA F o r m o r e i n f o r m a ti o n call: 714 979-X220 MILITARY SW ITCH IN G D IO D ES FEATURES • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED

in6373

Abstract: in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 IN6389 in6377
Contextual Info: MicroísemiCorp. f The dtoae experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 FEATURES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM IN6373 thru IN6389 and M PTE-5 thru M PTE-45C TRANSIENT