BRIDGE, 600V, 4A Search Results
BRIDGE, 600V, 4A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK126BG |
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Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK127BG |
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Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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BRIDGE, 600V, 4A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GBU4DContextual Info: Product Catalog > Diodes > Bridge Rectifiers > Part Number GBU4J product family BRIDGE RECTIFIERS package type GBU VRM PRV 600V Ifsm 150A IF(AV) 4.0A @Vf 1.0V @If 2.0A Trr IR 5.0µA @VR 600V Package Qty Tube : 20pcs/Tube, 1K/Box, 2K/Ctn; This product is listed under the following categories where you may find similar products: |
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20pcs/Tube, GBU4D | |
Contextual Info: Product Catalog > Diodes > Bridge Rectifiers > Part Number GBU8J product family BRIDGE RECTIFIERS package type GBU VRM PRV 600V Ifsm 200A IF(AV) 8.0A @Vf 1.0V @If 4.0A Trr IR 5.0µA @VR 600V Package Qty Tube : 20pcs/Tube, 1K/Box, 2K/Ctn; This product is listed under the following categories where you may find similar products: |
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20pcs/Tube, | |
Contextual Info: ZOWIE Bridge Rectifier GBL06L Low VF Bridge Rectifier 600V / 4.0A OUTLINE DIMENSIONS Case : GBL Unit : mm FEATURES 21.0 20.4 o 3.0 x 45 CHAMFER + ~ ~ 3.60 3.20 - 1.20 0.80 2.20 1.80 1.24 1.04 2.37 1.37 18.37 17.37 Internal structure with GPRC (glass passivated rectifier chip) inside |
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GBL06L MIL-STD-750, | |
GBL06Contextual Info: ZOWIE Bridge Rectifier GBL06L Low VF Bridge Rectifier 600V / 4.0A OUTLINE DIMENSIONS Case : GBL-L FEATURES 20.0 ± 0.20 + ~ ~ 3.5 ± 0.10 - Marking Identification 1.0 ± 0.1 13.5 ± 0.50 1.5 ± 0.20 11.0 ± 0.30 Internal structure with GPRC (glass passivated rectifier chip) inside |
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GBL06L MIL-STD-750, GBL06 | |
Contextual Info: ZOWIE Low VF Mini Bridge Rectifier Preliminary Z4SGP40JLH THRU Z4SGP40MLH 600V~1000V / 4A OUTLINE DIMENSIONS Case : Z4PAK-M Unit : mm FEATURES Top View * * * * * * * Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside |
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Z4SGP40JLH Z4SGP40MLH | |
SHINDENGEN DIODEContextual Info: < X ~ ') " jy -f U '7 v 4 * — K Low Noise Bridge Bridge Diode_ Single In-line Package OUTLINE DIMENSIONS LN4SB Case : 3S 600V 4A is f i • sip ;W ir-y • s i FS M •S R W S • t v . mm • O A . a « , FA Ufc&m |
OCR Scan |
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Contextual Info: ZOWIE Bridge Rectifier GBL02L THRU GBL06L Low VF Bridge Rectifier 200V~600V / 4.0A OUTLINE DIMENSIONS Case : GBL-L FEATURES Unit : mm 20.0 ± 0.20 3.5 ± 0.10 * Compliance to RoHS product * Low forward voltage drop + ~ ~ - 11.0 ± 0.30 2.6 ± 0.3 * Internal structure with GPRC (glass passivated rectifier chip) inside |
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GBL02L GBL06L | |
Contextual Info: —»•ii 7 U y y v At y -iy ^ 'f t - '" L" Low Noise Bridge b Bridge Diode Single In-line Package OUTLINE DIMENSIONS LN4SBD 600V 4A 1# •ey-cx • s ip y ^ y tr - y i § j l FSM •S R B S • t v , mm •O A . affl. FA RATINGS Absolute Maximum Ratings |
OCR Scan |
iE22t Ti-25 | |
Contextual Info: B /4 X J U y !f Low Noise Bridge Single In-line Package Bridge Diode •*W fN -äsH OUTLINE DIMENSIONS LN4SB60 TO 600V 4A 45 £1 •U L1S W UL File No,E 1 4 2 4 2 2 •S IP K 'j/ir-y • S I fsm RATINGS Absolute Maximum Ratings 1 a Item Storage Temperature |
OCR Scan |
LN4SB60 J514-5 | |
Contextual Info: ZOWIE Low VF Mini Bridge Rectifier Preliminary MBCS40JH THRU MBCS40MH 600V~1000V / 4A OUTLINE DIMENSIONS Case : MBCS Unit : mm 8.10 ± 0.10 10.50 ± 0.10 Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product |
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MBCS40JH MBCS40MH | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21962-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21962-4 INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
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PS21962-4/-4A/-4C/-4W PS21962-4 00V/5A | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21964-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21964-4 INTEGRATED POWER FUNCTIONS 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
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PS21964-4/-4A/-4C/-4W PS21964-4 00V/15A | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21963-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
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PS21963-4/-4A/-4C/-4W PS21963-4 00V/10A | |
Contextual Info: ZOWIE Low VF Mini Bridge Rectifier Preliminary Z4GP40JLH THRU Z4GP40MLH 600V~1000V / 4A OUTLINE DIMENSIONS Case : Z4PAK-D Unit : mm 1.28 ± 0.15 FEATURES Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product |
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Z4GP40JLH Z4GP40MLH | |
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znr 10k 270
Abstract: dipipm application note E80276 PS21963-4 PS21963-4A PS21963-4C PS21963-4W znr 10k
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PS21963-4/-4A/-4C/-4W PS21963-4 00V/10A znr 10k 270 dipipm application note E80276 PS21963-4 PS21963-4A PS21963-4C PS21963-4W znr 10k | |
E80276
Abstract: PS21962-4 PS21962-4A PS21962-4C PS21962-4W
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PS21962-4/-4A/-4C/-4W PS21962-4 00V/5A E80276 PS21962-4 PS21962-4A PS21962-4C PS21962-4W | |
Z4PAK
Abstract: Z4GP40KL 600V 4A BRIDGE
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Z4GP40JL Z4GP40ML Z4PAK Z4GP40KL 600V 4A BRIDGE | |
BRIDGE-RECTIFIER mini package
Abstract: MBCS
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MBCS40JH MBCS40MH BRIDGE-RECTIFIER mini package MBCS | |
capacitor 22n
Abstract: ZENER DIODE 24V PS21997-4 ps21997 mitsubishi semiconductors power modules E80276 dual-in-line package intelligent power module 600v 30a mitsubishi dc motor control
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PS21997-4/-4A/-4C/-4W PS21997-4 00V/30A E80276 100ns capacitor 22n ZENER DIODE 24V PS21997-4 ps21997 mitsubishi semiconductors power modules E80276 dual-in-line package intelligent power module 600v 30a mitsubishi dc motor control | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21965-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21965-4 INTEGRATED POWER FUNCTIONS 600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS |
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PS21965-4/-4A/-4C/-4W PS21965-4 00V/20A | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS |
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PS21993-4/-4A/-4C/-4W PS21993-4 00V/10A E80276 100ns | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21994-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21994-4 INTEGRATED POWER FUNCTIONS 600V/15A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS |
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PS21994-4/-4A/-4C/-4W PS21994-4 00V/15A E80276 100ns | |
PS21961-4
Abstract: IPM DC E80276 IGBT MODULE
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PS21961-4/-4A/-4C/-4W PS21961-4 00V/3A PS21961-4 IPM DC E80276 IGBT MODULE | |
capacitor 22n
Abstract: denso ul ZENER DIODE 24V denso E80276
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PS21993-4E/-4AE/-4CE/-4EW PS21993-4E 00V/8A E80276 100ns capacitor 22n denso ul ZENER DIODE 24V denso E80276 |