Z4GP20JLH
Abstract: Z4PAK
Text: ZOWIE Bridge Rectifier 600V~1000V / 2A Z4GP20JLH THRU Z4GP20MLH OUTLINE DIMENSIONS FEATURES * * * * * * * * Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product Lead less chip form, no lead damage
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Z4GP20JLH
Z4GP20MLH
Z4PAK
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FBI3.7D1M1
Abstract: FBI1.5D5S2 7B1M1 FBI5J1M1 FBI4K5M1 FBI1.5J5S2 FBI1.5-5S2 FBI1.5L5S2 FBI2L5S2 FBI4M5M1
Text: QUICK GUIDE Bridge Rectifiers BRIDGE RECTIFIERS (IN LINE BRIDGES) SERIES FBI1.5 4S1 FBI1.5 5S2 FBI2 4S1 FBI2 5S2 FBI2.5 4S1 FBI3.7 1M1 FBI4 5M1 FBI4 7M1 FBI5 1M1 FBI5.1 1M1 FBI6 5M1 FBI6 1M1 FBI8 5M1 FBI10 7M1 FBI15 1M1 IF IFSM 50V 100V 200V 1.5A 1.5A 2A
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FBI10
FBI15
FBI10B7M1
FBI15B1M1
FBI10J7M1
FBI15J1M1
FBI10G7M1
FBI15G1M1
FBI10K7M1
FBI15K1M1
FBI3.7D1M1
FBI1.5D5S2
7B1M1
FBI5J1M1
FBI4K5M1
FBI1.5J5S2
FBI1.5-5S2
FBI1.5L5S2
FBI2L5S2
FBI4M5M1
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Untitled
Abstract: No abstract text available
Text: ZOWIE Bridge Rectifier 600V~1000V / 2A Z4GP20JLH THRU Z4GP20MLH OUTLINE DIMENSIONS FEATURES Case : Z4PAK Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product Lead less chip form, no lead damage
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Z4GP20JLH
Z4GP20MLH
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mbcs
Abstract: BRIDGE-RECTIFIER mini package
Text: ZOWIE Low VF Mini Bridge Rectifier Preliminary MBCS20JH THRU MBCS20MH 600V~1000V / 2A OUTLINE DIMENSIONS Case : MBCS Unit : mm 8.10 ± 0.10 10.50 ± 0.10 Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Lead free product, compliance to RoHS
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MBCS20JH
MBCS20MH
mbcs
BRIDGE-RECTIFIER mini package
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Untitled
Abstract: No abstract text available
Text: ZOWIE Bridge Rectifier Preliminary MBCR20JLH 600V / 2A OUTLINE DIMENSIONS Case : MBCR Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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MBCR20JLH
300uS
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igbt 500V 22A
Abstract: 22a ic igbt 2A ic MARKING QG 7721-2A SCHEMATIC servo dc IGBTS igbt 500V 1A 280/TDA 7721 RECTIFIER BRIDGE 25A 600V 7721-1A
Text: MODEL 7721 SERIES NEW PRODUCT H Bridge Power Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. MODELS/RANGE 7721-1A 7721-2A 22A 500V IGBTs with 8A 600V ultrafast diodes
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721-1A
721-2A
O-220
O-247
igbt 500V 22A
22a ic
igbt 2A
ic MARKING QG
7721-2A
SCHEMATIC servo dc IGBTS
igbt 500V 1A
280/TDA 7721
RECTIFIER BRIDGE 25A 600V
7721-1A
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Z4PAK
Abstract: No abstract text available
Text: ZOWIE Bridge Rectifier 600V~1000V / 2A Z4GP20JH THRU Z4GP20MH OUTLINE DIMENSIONS FEATURES Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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Z4GP20JH
Z4GP20MH
300uS
Z4PAK
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Untitled
Abstract: No abstract text available
Text: ZOWIE Bridge Rectifier 600V~1000V / 2A MBCR20JLH THRU MBCR20MLH OUTLINE DIMENSIONS FEATURES Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Compliance to RoHS product Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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MBCR20JLH
MBCR20MLH
300uS
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s2vb
Abstract: s2vb shindengen S2VB* bridge S2VB 20 40 S2VB60
Text: SHINDENGEN Square In-line Package Bridge Diode S2VB60 OUTLINE DIMENSIONS Case : S2VB Unit : mm 600V 2A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Without heatsink, Ta=40℃
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S2VB60
1mst10msc
s2vb
s2vb shindengen
S2VB* bridge
S2VB 20 40
S2VB60
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MBCR20M
Abstract: MBCR20J bridge 2A 600v MBCR20MH MBCR20JH
Text: ZOWIE Bridge Rectifier 600V~1000V / 2A MBCR20JH THRU MBCR20MH OUTLINE DIMENSIONS FEATURES Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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MBCR20JH
MBCR20MH
300uS
MBCR20M
MBCR20J
bridge 2A 600v
MBCR20MH
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features General Description ï Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. ï Fully operational to 650V ï ± 50V/ns dV/dt immunity ï Gate drive power supply range: 10 - 35V
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IX2R11
IX2R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX2R11S3
IX2R11P7
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S2VB* bridge
Abstract: S2VB60 S2VB bridge 2A 600v S2VB 20 40 MARKING CODE TL marking 6 bridge diode
Text: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S2VB60 Unit : mm Weight : 3g (typ.) Package:S2VB 600V 2A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ③ ④ 7.5 Feature • High-Reliability • Heat Resistance
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S2VB60
25unless
1mst10msTj
J534-1
S2VB* bridge
S2VB60
S2VB
bridge 2A 600v
S2VB 20 40
MARKING CODE TL
marking 6 bridge diode
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Untitled
Abstract: No abstract text available
Text: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S2VB60 Unit : mm Weight : 3g (typ.) Package:S2VB 600V 2A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ③ ④ 7.5 Feature • High-Reliability • Heat Resistance
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S2VB60
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Untitled
Abstract: No abstract text available
Text: SQ I P Bridge Diode Square In-line Package OUTLINE S2VB60 Unit : mm Weight : 3g typ. Package S2VB 600V 2A • • • ② ① ③ ④ IR 7.5 Feature • High-Reliability • Heat Resistance • Low IR 品名 Type No. 20 + S2VB 6N 20 − ロット記号(例)
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S2VB60
J534-1
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s2vb
Abstract: S2VB* bridge S2VB 20 40 S2VB20 DIODE 03 S2VB60 6n diode s2vb shindengen 600v 2a
Text: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S2VB□ Unit : mm Weight : 3g(typ.) Package:S2VB 600V 2A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ③ ④ 7.5 Feature • High-Reliability • Heat Resistance
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25unless
S2VB20
S2VB60
1mst10msTj
s2vb
S2VB* bridge
S2VB 20 40
S2VB20
DIODE 03
S2VB60
6n diode
s2vb shindengen
600v 2a
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Untitled
Abstract: No abstract text available
Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D2SB60A Unit : mm Weight : 2.0g (typ.) Package:2S 600V 2A 品名 Type No. 特長 • 薄型 SIP パッケージ • 高 IFSM ロット記号(例) Date code
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D2SB60A
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HV MOSFET
Abstract: No abstract text available
Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX2R11
IX2R11
100uF/250V
50v/ns
IXDD414
-600V
IXFP4N100Q
DSEI12-10A
HCPL-314J
HV MOSFET
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mosfet 600V 10A logic level
Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX2R11
IX2R11
HCPL-314J
DSEI12-10A
IXDD414
IXFP4N100Q
-600V
IX2R11S3
mosfet 600V 10A logic level
IXFP4N100Q
IXDD414
IX2R11P7
High Side
dsei12
DSEI12-10A
IXDD
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S2VB
Abstract: S2VB* bridge S2VB 20 40 S2VB20
Text: SQ I P型 ブリッジダイオード Square In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package:S2VB Unit : mm Weight:3g(typ.) S2VB□ 600V 2A 品名 Type No. ロット記号(例) Date code +0.3 ●耐湿性に優れ高信頼性
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13MAX
13MAX
20MIN
25unless
S2VB20
S2VB60
wave50Hz
S2VB
S2VB* bridge
S2VB 20 40
S2VB20
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3d4b41
Abstract: 2D4B41 2B4B41 3B4B41 2J4B41 3G4B41
Text: 9097250 3^ 1 e | TOSHIBA <DISCRETE/OPTO) ci 0 ci 7 g 5 0 DGG233S 2 J4B 41 600V S 0 ' T ~ S i 3 - O S ’. ‘ 39C 02335 RECTIFIER STA CK BRIDGE) | 2A Unit in mm MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING 2B4B41 Repetitive Peak Reverse Voltage 2D4B41 2G4B41
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DGG233S
2B4B41
2D4B41
2G4B41
70X70X2
3d4b41
3B4B41
2J4B41
3G4B41
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Untitled
Abstract: No abstract text available
Text: SQ.I.P.3S! T/U'Vv ^'I'tT-K Square In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ R A TIN G S A bsolute Maximum R atings - _ _ E3 At % ft. — ■— •— _ * o TT ——— -— _ Type No. Symbol Conditions
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50HzIE3Â
S2VB60
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S2VB40
Abstract: S2VB20 SHINDENGEN DIODE
Text: Sauare In-line Packag Bridge Diode 54E 1> SHINDENGEN ELECTRIC MFG ISHEJ • 021^307 QOOOSll TQ3 O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ RATING S $5;fcÎSi:£/ËÎ& n Absolute Maximum Ratings @ t m Symbol I t em Storage Tem perature S-g-gPfiJS Operating Junction Tem perature
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S2VB20
S2VB40
S2VB60
50HzIE3&
SHINDENGEN DIODE
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"12 amp" bridge rectifier
Abstract: MZ800 MZ80 MZ1000 MZ1200 MZ200 MZ200F MZ400 MZ600 MZ-8
Text: Three Phase 12 Amp Bridge Rectifier MZ200 - MZ1200 RED DOT POSITIVE c— !. ' K/ ; + H , U- l MZ200 MZ200F RED DOT POSITIVE RED DOT POSITIVE I i- ^ U 1 - =3 , 1 1 u T 1 / 4 - 2 8 U N C -2A M Z200FTDim. Inches Minimum A B C D E F G H 1 J K .018 -.290
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MZ200
MZ1200
MZ200
MZ200FT
MZ200F
MZ200FS
"12 amp" bridge rectifier
MZ800
MZ80
MZ1000
MZ1200
MZ200F
MZ400
MZ600
MZ-8
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1N4436
Abstract: 1N4437 1N443 1N4438
Text: Single Phase Bridge Rectifier N4436 1N4438 RED DOT POSITIVE A C 1 A C 2 + H Note: Electrically Isolated RED DOT POSITIVE RED DOT POSITIVE 1 —K —L Ol I I I f r r i M _ i , f ! I u T 1 / 4 - 2 8 UNC-2A 1N443_FTDim. Inches For Parts w /o Flags Delete F -1N443_FS
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F--1N443
N4436â
1N4438
1N4436
1N4437
1N443
1N4438
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