BROAD BAND OPERATION Search Results

frankfurt oder

Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
Contextual Info: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several

frankfurt

Abstract: TFB2208
Contextual Info: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several

OAT1523S-OLT-B

Abstract: LD 7775
Contextual Info: FEDFOAT1523-OLT-01 OKI Electronic Components OAT1523S-OLT-B Issue Data : Jan. 15, 2002 Broad band-PON Optical Module APPLICATION • Optical transceiver for Broad band- PON application ITU-T Rec. G.983.3 FEATURES · 1- fiber bi- directional transmission by incorporated WDM

RFANT7635110A1T

Abstract: ltcc antenna ltcc antenna 2.4 GHz WALSIN WF SERIES chip antenna ltcc chip LF antenna design X band antenna WALSIN walsin antenna
Contextual Info: Walsin Technology Corporation LTCC Multi Layer Chip Antenna – Broad Band Type For ISM Band 2.4GHz Application Patent Pending Surface Mounted Devices with a small dimension of 3 7.6 x 3.5 x 1.1 mm future meet miniaturization trend. 380MHz broad bandwidth design makes less

rf amplifier broad band

Abstract: RMDA1840 long range gold detector circuit diagram
Contextual Info: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The

RAYTHEON

Abstract: RMDA1840
Contextual Info: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The

RAYTHEON

Abstract: rf amplifier broad band MAX 8778 RMDA1840
Contextual Info:
 Raytheon Commercial Electronics RMDA1840 18 to 40 GHz Broad Band Amplifier MMIC The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The

Contextual Info: FLM1414-12F - X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz

Contextual Info: FLM1314-6F -FEATURES • • • • • • X, Ku-Band Internally Matched FET High Output Power: P ^ b = 37.5dBm Typ. High Gain: = 5.5dB (Typ.) High PAE: r!add = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz

db404

Abstract: PH 2896 P DB-404 Decibel Products db404 H342 DB5007 DB404L
Contextual Info: BROAD BAND ANTENNA DB404 3.8 or 5 dB GAIN, 406-512 MHz The DB404, with its 2-stack collinear array of dual dipoles, provides a broad bandwidth that allows the antenna to be ordered in advance of frequency assignment. • Extremely Rugged - Resists winds to

Contextual Info: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz

fmm5049

Abstract: FMM5049VT mmic case styles 28492
Contextual Info: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC

AN0005

Abstract: CHA2093RBF RO4003
Contextual Info: CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage wide band monolithic low noise amplifier. • Broad band performance: 20-30GHz

MA4SW510

Abstract: PIN Diode Switch for frequencies up to 10 GHz
Contextual Info: MA4SW510 SP5T PIN Diode Reflective Switch MA4SW510 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 50 MHz to 26 GHz 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW510 is a SP5T Series-Shunt broad band switch

FLM2527L-20F

Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

IM324

Abstract: FLM1314-6F
Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

FLM1314-6F

Abstract: tel 1145 319
Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

FLM1314-6F

Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

TRF7003

Abstract: TRF8010
Contextual Info: TRF8010 QUESTION: Does the TRF8010 have band-limited matching on chip? Could it work at 400 MHz? Answer: The TRF8010/11 is inherently a relatively "broad-band" device but does have interstage matching on-chip. The GSM evaluation board is particularly matched for

FLM1414-12F

Abstract: 3600mA
Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

fujitsu x band amplifiers

Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package

Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: hadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed