BS 050 TRANSISTOR Search Results

2N2907A surface mount

Abstract: 2N2907A HCT790
Contextual Info: OPTEK Product Bulletin HCT790 May 1993 Surface Mount Quad PNP Transistor Type HCT790 -.200 5.OB .050 (1 27)REF 350 (8 BS) SO 050 (1.27) REP 1 200 (5.08) .075 (1.91) .085 (2. 16) — 075 (1.9]) DIMENSIONS ARE IN INCHES (MILLIMETERS) .063 (1.60) Feature Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)

Contextual Info: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

Contextual Info: International I R Rectifier Data Sheet No. PD -6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary • G ate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current

mos fet marking k4

Abstract: VP5225 VP5225K4 l5 transistor
Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM

Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package

ss 3977

Abstract: 600v plating phase rectifier diagram IRFBC40R ic ir2113
Contextual Info: International 1@I]Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings

Contextual Info: BSP 295 In fin e o n t«e h n o l o g i i t SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level * ‘'GS th = °-8 -20V Vbs fe BSP 295 50 V 1.8 A Type BSP 295 Ordering Code Q67000-S066 Type WDS(on) Package Marking 0.3 i l

E 102H transistor

Abstract: 20L08 SY 180/4 50/HK 102H transistor M151 TCC20L08 transistor A1C
Contextual Info: H m m 'nm nr-tS^-* I r / l v f S 140 Commerce Drive f f f Montgomery ville, PA 18936-1013 P ro g re s s P o w e re d b y T e c h no log y Tel: 215 631-9840 TCC20L08 RF & MICROWAVE TRANSISTORS CLASS A MICROWAVE • ■ . ■ . FREQUENCY POWER OUT POWER GAIN

Contextual Info: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6

IRS2127S

Abstract: ge.462 008 2000.02 IRS2127SPbF
Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune

1R2110S

Abstract: 1rfbc20 1R2110 1RFPE50 IR2110 msc01aa ir2110 circuit DIAGRAM high side IGBT driver IR2110-1 IR2110-2
Contextual Info: International iffll Rectifier Data Sheet No. PD-6.011E I p o l l V d i . - i n I I w HIGH AND LOW SIDE DRIVER Features Product Summary • F loa ting ch an ne l d esigned fo r bootstrap operation F u lly o pe ra tion al to +500V T ole ra nt to n egative tra n s ie n t voltage

IR21281

Abstract: IR2128 application notes IRS21271SPBF IRS2128PBF IRS2128
Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune

Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune

IR2128 application notes

Abstract: IRS21271PBF IR2128 IR21281 PD60299 IRS2128PBF IRS2128
Contextual Info: Data Sheet No. PD60299 IRS212 7, 71, 8, 81 (S)PbF CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune

Contextual Info: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications

Contextual Info: TRANSDUCERS Solutions For Voltage, Current, Power & Frequency CURRENT SOLUTIONS An Advanced Line Of Precision Transducers: • True RMS • DC Sensing • Loop Powered • Self Powered • Active & Reactive Power TM www.crmagnetics.com sales@crmagnetics.com

CR8300

Contextual Info: TRANSDUCERS Solutions For Voltage, Current, Power & Frequency CURRENT SOLUTIONS An Advanced Line Of Precision Transducers: • True RMS • DC Sensing • Loop Powered • Self Powered • Active & Reactive Power TM www.crmagnetics.com sales@crmagnetics.com

Contextual Info: International I R Rectifier Data Sheet No. PD-6.045C IR 2 1 0 3 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V