BS 240 SIEMENS Search Results

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

SS89 transistor

Abstract: SS89 siemens BS 240 siemens SS89 ss89 to-92 BSS89 BSS 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Is • Logic Level • ^ G S th 1 ^ 3 ^ = 0.8.2.0V VPT05158 Pin 1 Pin 2 G Type BSS 89 ^bs 240 V Type BSS 89 BSS 89 BSS 89 BSS 89 Ordering Code Q62702-S455 Q62702-S519

Q62702-S616

Abstract: Q62702-S483 BS 240 siemens BSS229 Q62702-S601 Q62702-S489 q62702-s484 Q62702-S455 BSS 130 Q62702-S615
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors Bedrahtete Bauformen Leaded types Typ Type ^D S m ax ^G S (th ) fa (max) ^ D S {o n )m a x V V mA n N-Kanal-Anreicherungstypen P lot mW Bestellnummer Ordering code Gehäuse Package

321 SOT

Abstract: DIP-6 bsp300 SOT23_215 BSS125
Contextual Info: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416

BUZ100

Contextual Info: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A

diode ft 344

Abstract: BS 240 siemens transistor buz 210
Contextual Info: SIEMENS BUZ 344 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 344 Vds 100 V b 50 A flbs<on 0.035 ß Package Ordering Code TO-218 AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

KSS 240

Contextual Info: SIEMENS BUZ 31 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 31 Vds 200 V to 14.5 A ^DS on 0.2 f l Package Ordering Code TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: SIEMENS B S S 192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type VDS b BSS 192 -240 V -0.15 A Type BSS 192 Ordering Code Q62702-S634 %S(on) 20 Q. Package Marking SOT-89 KB Tape and Reel Information

Contextual Info: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance

transistor marking 7D

Abstract: marking MS 7d marking "marking ms"
Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-S510

Contextual Info: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

siemens r10 core

Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Contextual Info: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for

buz 342 G

Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Contextual Info: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

Contextual Info: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation

SIEMENS NH FUSE

Abstract: siemens M20 3ld22 siemens VDE 0660 manual
Contextual Info: Siemens AG 2007 17 SENTRON Switching and Protection Devices – Switch Disconnectors 17/4 17/8 17/10 17/13 17/16 17/17 17/18 17/19 17/21 17/24 17/26 17/29 Introduction 3KA, 3KE, 3LD Switch Disconnectors 3KA, 3KE Switch Disconnectors up to 1000 A General data

Contextual Info: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V40 1 20GU HYS72V40(1)20GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation

Contextual Info: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode

BUP101

Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Contextual Info: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)

SPB80N03L

Abstract: spp60n
Contextual Info: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q