BS-170 EQUIVALENT Search Results

12 v 100w power amp diagram

Abstract: voltage regulator IC 723 AN894 REGULATOR IC V17 MA376 AN8946SB amp ic 11 pin Gva tv 32" 12 v 100w amp pulse width modulation demodulation
Contextual Info: ICs for TV AN8946SB FM demodulation IC for BS/CS broadcasting • Overview 28 14 15 ■ Features 0.2 +0.1 –0.05 0.9±0.1 2.05±0.2 0.1±0.1 • 5 V single power source • Low power dissipation typ. 170 mW • S/N 65 dB or more • Inter-modulation interference ratio: 50 dB or more

12 v 100w power amp diagram

Abstract: MA376 AN8946SB
Contextual Info: ICs for TV AN8946SB FM demodulation IC for BS/CS broadcasting • Overview 11.6±0.3 0.8 15 0.1±0.1 14 0.4 7.2±0.3 9.3±0.3 0.9±0.1 • 5 V single power source • Low power dissipation (typ. 170 mW) • S/N 65 dB or more • Inter-modulation interference ratio: 50 dB or more

Contextual Info: Types TAT and TAX Wet Tantalum Capacitor – CLR 79 MIL-C-39006/22 CLR 81 (MIL-C-39006/25) Commercial Types TAT for CLR79 and TAX for CLR81 Military Types CLR79 and CLR81 and CDE’s commercial equivalent TAT and TAX, all with Teflon inner-seal, glass-tometal hermetic outer-seal, tantalum case construction, have

SM 3119 N

Abstract: SM 3119
Contextual Info: AMP Catalog 82602 P re-lnsulate d Sealed T erm in als and S p lic e s R e vise d 12-02 Spade Term inals, Butt Splices and 250 Series FA ST O N Term inals Spade Term inals Wire Size Range: AWG 22 to 10 [0.26 to 6.64 mm2] CMA 509 to 13,100 Material L AWG im m']

Contextual Info: Pre-Insulated Sealed Terminals and Splices Catalog 82602 Revised 12-02 Product Facts • Moisture-proof seal prevents corrosion ■ Insulation allows visual examination ■ Seals out moisture and provides exceptional wire insulation support ■ One piece assembly allows

AD941

Abstract: P2826
Contextual Info: 10-Bit, 170/200 MSPS 3.3 V A/D Converter AD9411 Data Sheet FEATURES SCALABLE REFERENCE TRACK AND HOLD ADC 10 10-BIT PIPELINE / CORE TE VIN+ AD9411 VIN– CLK+ CLK– CLOCK MANAGEMENT LVDS OUTPUTS LVDS TIMING DATA, OVERRANGE IN LVDS DCO+ DCO– S1 S5 Figure 1.

55824-1

Abstract: 55848 diode 8-55851-2 RING LUG M6
Contextual Info: Pre-Insulated Sealed Terminals and Splices Catalog 82602 Revised 12-02 Product Facts • Moisture-proof seal prevents corrosion ■ Insulation allows visual examination ■ Seals out moisture and provides exceptional wire insulation support ■ One piece assembly allows

Contextual Info: * SY10L422-4/5/7 SY100L422-4/5/7 SY101L422-4/5/7 LOW POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The Synergy SY10L/100L/101L422 are low-power versions of Synergy's ultra-high-speed 1,024-bit Random Access Memories RAMs , designed with advanced Emitter

BFY52 equivalent

Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device

VNW100N04

Contextual Info: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10L422-5/7 SY100L422-5/7 SY101L422-5/7 LOW-POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES The Synergy SY10L7100L/101L422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized

Contextual Info: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: @ LG Semicon. Co., LTD. Description Features The GMM7324000BS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 32 pieces of 4M x lbits DRAMs in 20/26 pin SOJ package on the printed circuit board. This module can be as well used as 8M x 16 bits Dynamic RAM

SY101L484

Contextual Info: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity

Contextual Info: =>Y104?2-3M/5/7 *0 * v 1 lhj.4:- 2 'A: h j < 7 SYNERGY R ii/, j e c l -.v w .u ^ -a , S E M IC O N D U C T O R 3 Y 1 O I W U 22-5/7 DES C RIPTIO N FEA T U R E S • Address access time, tAA: 3/4/5/7ns max. The Synergy SY10/100/101422 are 1024-bit Random

Contextual Info: STG4159 Low voltage 0.3 Ω max single SPDT switch with break-before-make feature and 10 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low “ON” resistance VIN = 0 V:

tws bs3 433

Abstract: MBM100422 hm100422 TWS 434 dm10422 DM100422 DM100422A
Contextual Info: DM 100422/DM 100422A National Semiconductor Corporation March 1987 DM 100422/DM 100422A 1024-Bit 256 x 4 ECL RAM General Description Features The DM100422/DM100422A is a 1024-bit ECL random ac­ cess memory organized as 4 blocks of 256 bits. Since each block has its own Select input, the memory can be config­

Contextual Info: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.

SAFCH

Abstract: SFE10 TA31273FN K3900
Contextual Info: TA31273FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31273FN AM RF/IF Detector IC The TA31273FN is an RF/IF detector IC for AM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit. Features • RF frequency: 240 to 450 MHz

Contextual Info: 5 7E » SYNERGY SEMIC ON DUC TOR IQOlBfll OOOOOE1 flOO SY10480-6 * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR SY100480-6 SY101480-6 - ^ - 2 3 - 0 ys DESCRIPTION FEATURES The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

BC107 equivalent transistors

Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device

10L42

Abstract: 1605 B iw16
Contextual Info: * SY10L422-5/7 SY100L422-5/7 SY101 L422-5/7 LOW-POWER 256 x 4 EC L RAM SYNERGY SEMICONDUCTOR FEA TU RES D ESC RIPT IO N The Synergy SY10LV100L/101L422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized