BS011 Search Results

NDS9942

Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
Contextual Info: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

power supply in ic 7915 circuit diagram

Abstract: LP147 sd1124 LF148 LF347J LF347WM LF147 LF147D LF147J LF347D
Contextual Info: NATL SEMICOND LINEAR BSE D • bS011S4 O O t ^ G l 3 ■ LF147/LF347/LF347B Wide Bandwidth Quad JFET Input Operational Amplifiers General Description Features Internally trimmed offset voltage 5 mV max Low input bias current 50 pA Low Input noise current

T79A

Abstract: fet JTW LM4250H HPAC
Contextual Info: NATL SEMICOND LINEAR 25E D bS011H4 OGhâSHS 1 LM4250/LM4250C Programmable Operational Amplifier General Description Features The LM4250 and LM425QC are extremely versatile pro­ grammable monolithic operational amplifiers. A single exter­ nal master bias current setting resistor programs the input

Contextual Info: NATIONAL SEMICON» LOGIC bS01122 0075360 441 « N S C 1 blE T> co T ~ Ì 6 - 0 7 - ( f National Semiconductor 54FCT/74FCT373 Octal Transparent Latch with TRI-STATE Outputs General Description Features The 'FCT373 consists of eight latches with TRI-STATE out­

7477 D latch

Abstract: bS01125 7477PC
Contextual Info: NATIONAL SEMICON» {LOGIC} i D2E 1 | bS01125 0DL3753 1 I CONNECTION DIAGRAM P IN O U T A s 54/7477 QUAD D-TYPE LATCH Di [ T i^ Q t d2 T JJJa i E 3.4 f*3~ H ]E „ Vcc( 4 TFJ g n d D 3Ü jö jN C D< [T I ] 03 n c PIN PKGS OUT COMMERCIAL GRADE MILITARY GRADE

gal16v8a national semiconductor

Abstract: GAL16V8A GAL Gate Array Logic
Contextual Info: ATL SEMICÖND MEMORY 31E » bS0112b 00^4532 T PRELIMINARY GAL16V8A Generic Array Logic General Description Tha NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Contextual Info: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120

27C64 ROM

Contextual Info: NMC27C128C NATL SEfllCOND {MEMORY} ID E D | bS0112t. OOblSIS 1 | PRELIMINARY J 3 1 National Jl m Sem iconductor - r - e f b - n - 'd t f NMC27C128C 131,072-Bit 16k x 8 UV Erasable CMOS PROM (Very High Speed Version) General Description Features The NMC27C128C is a high-speed 128k, UV erasable and

Contextual Info: NATIONAL SEMICON» LOGIC bS01125 0070=135 7 31E D CM 04 CO National ÉlA Semiconductor F100322 Low Power 9-Bit Buffer General Description Features: The F100322 is a monolithic 9-bit buffer. The device con­ tains nine non-inverting buffer gates with single input and

Contextual Info: 899A N AT IONAL SEMICONJ L06IC) tlE D • bS01122 007353^ 'JOS M N S C l T - ä 2-;?äH 3 National Semiconductor 74FCT899A 9-Bit Latchable Transceiver with Parity Generator/Checker General Description Features The ’FCT899A is a 9-bit to 9-bit parity transceiver with trans­

AM29845

Abstract: 74AC846 C 5386
Contextual Info: AC845 • ACT845 • AC846 •* ACT846 NATIONAL SEMICOND -CLOGIO GEE D • bS011E2 0[3b£757 4 | 54AC/74AC845 • 54ACT/74ACT845 " 54AC/74AC846 • 54ACT/74ACT846 / - / $ . - * 7-// 8-Bit Transparent Latch Description Connection Diagrams The ’AC/'ACT845 and ’AC/’ACT846 bus Interface

m-20ia

Abstract: vogt v4 Vogt B U5 3362 Variable Resistor LM301AJ 8pin ic power 22E LM101 LM101A LM201A LM201AH
Contextual Info: NATL SEMICOND LINEAR SHE D bS01124 0Qbfla47 4 LM101A/LM201A/LM301A Operational Amplifiers General Description The LM101Aseries are general purpose operational amplifi­ ers which feature improved performance over industry stan­ dards like the LM709. Advanced processing techniques

74FCT841

Abstract: 74FCT841B
Contextual Info: 841A*841B NATIONAL SEMICOND LOGIC blE D bS01122 □DTSSB'ì Tbb « N S C l 0 7 'il National Semiconductor 74FCT841A*74FCT841B 10-Bit Transparent Latch with TRI-STATE Outputs General Description Features The bus interface latch is designed to elim inate the extra

ESE 1012

Abstract: LP3111 LP311N
Contextual Info: LP311 NATL SEMICOND LINEAR S2E D • bS01124 QObflTEO 1 T-73-53 National Semiconductor LP311 Voltage Comparator General Description Features The LP311 is a low power version of the Industry-standard LM311. It takes advantage of stable high-value Ion-Implant­

11C70

Abstract: F100K MC1670
Contextual Info: 11C70 NATIONAL SEniCOND LOGIC LIE ì> • bS011E2 QQ7bQ37 415 « N S C l 03 National mÆ Semiconductor Not Intended For New Designs T -% '0 7 - 0 S 11C 70 Master-Slave D-Type Flip-Flop General Description The 11C70 is a high-speed E C L D-Type Master-Slave FlipFlop capable of toggle rates over 650 MHz. Designed pri­

microstrip resistor

Abstract: 11C70 F100K MC1670 CQ250 cd 40011 JT32V
Contextual Info: 11C70 NATIONAL SEniCOND LOGIC blE D • bS01122 Q07bG37 41S M N S C l EH National Æ Æ Semiconductor Not Intended For New Designs l T L,iC -O 7 -0 '& 11C70 Master-Slave D-Type Flip-Flop General Description The 11C70 is a high-speed ECL D-Type Master-Slave Flip­

nmc9346n

Abstract: NMC9346
Contextual Info: NATL SEMÎCOND MEMORY 3 IE D bS0112b Q O L 34SI 4 NMC9346 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 Is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM

74fct245

Contextual Info: NATIONAL SEMICOND LOGIC blE ]> • bS01125 0D7S371 H3*) m CM EHNational t - s* - ? * * / ÆM Semiconductor 54FCT/74FCT245 Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245 contains eight non-inverting bidirectional buff­

CuL9960

Abstract: ul9960 ic 7441 7441 1 of 10 decoder drive ST7715 T9315
Contextual Info: NATIONAL SEMICOND -CLOGIO D2E » | bS01125 □□bMlME ö | 15 T -S h t? 9315 I-OF-IO DECODER D ES C R IP TIO N — The '15 accepts 1248 binary coded decim al inputs and provides ten m utually exclusive outputs to directly con tro l the ionizing potentials of many gas fille d cold cathode indicator tubes. The '15 is a

OZ 9910 a

Abstract: OZ 9910
Contextual Info: N A TI ON AL S E M I C O N D LOÛIC blE D bS01122 0 G 7S GG 3 IMS 7 ^ - 0 7 -1 1 Semiconductor 54AC/74AC574 • 54ACT/74ACT574 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description Features The 'A C /’ACT574 is a high-speed, low power octal flip-flop

LM6141

Abstract: 10v regulator 7910 lm814 Ior 4020 transistor 29 amp LM6141wm LM124 LM185 LM614 LM614CN
Contextual Info: LM614A/LM614 NATL SEHICON» LINEAR 22E T> bS01154 □ □bfl'OQ b National Semiconductor 7“- 7 9 - / 0 LM614A/LM614 Quad Operational Amplifiers and Adjustable Reference General Description Features (Guaranteed over temperature & supply) The quad operational amplifiers are a versatile commonmode-to-the-negative-supply ("single supply") type similar

LH2111J

Abstract: linear application handbook LH2311 D16C LH2111 LH2111D LH2211 LH2211D LH2311D LM111
Contextual Info: 55E D LH2111/LH2211/LH2311 NATL SEMICOND LINEAR bS01154 GObflflSO b T -13 -J3 National Semiconductor LH2111/LH2211/LH2311 Dual Voltage Comparators General Description Features The LH 21 11 series of dual voltage comparators are two LM111 type comparators in a single hermetic package. Fea­

bc848 to 92

Abstract: 2n2222 surface mount 2N2222 T0-92 2n2222 national 2n2222 2N2222 t0 39 2N3704 NATIONAL SEMICONDUCTOR 2N3302 2N4123 2N6714
Contextual Info: NATL SEMICOND DISCRETE bflE T> • bS01130 003^521 & T3 General Purpose Amplifiers and Switches (continued) NSC 5 w ■o' D e v ic e s VcE0(n»l> (V o lts ) NPN 32 30 (dB ) Package I’ d (Amb) (m W ) M ax 3 0 0 Typ 10 3.0 TO -236* 350 2.0 125 10 6.0 T 0 -9 2 (9 7 )