BS107 TRANSISTOR Search Results

BS107 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

BS107 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BS107A Abstract: BS107 MOTOROLA Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol	OCR Scan	BS107/D BS107 BS107A BS107A BS107 MOTOROLA	PDF
TO-92-18RM Abstract: BS107 VN2010L TO-92-18R Contextual Info: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications	Original	VN2010L/BS107 VN2010L BS107 O226AA) P-38283--Rev. TO-92-18RM BS107 VN2010L TO-92-18R	PDF
BS107 Abstract: VN2010L Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D	Original	VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L	PDF
equivalent of BS107 Abstract: BS107 application BS107 vn2010l Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D	Original	VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 equivalent of BS107 BS107 application BS107 vn2010l	PDF
BS-107C Contextual Info: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits	OCR Scan	VN2010L/BS107 VN2010L BS107 P-38283--Rev. O-226AA) BS-107C	PDF
Contextual Info: Temic siiiconix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12	OCR Scan	VN2010L/BS107 VN2010L BS107 Su5/94) O-226AA) P-38283--	PDF
VN2010L Abstract: BS107 Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D	Original	VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 VN2010L BS107	PDF
equivalent of BS107 Abstract: BS107 VN2010L BS107 application Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W	Original	VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application	PDF
BS107 MOTOROLA Abstract: BS107A BS107 Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs	Original	BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107	PDF
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W	Original	VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05	PDF
BS107 Abstract: 55C24 VN2010L Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W	Original	VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM O-226AA) S-04279--Rev. 16-Jul-01 BS107 55C24 VN2010L	PDF
ha1100 Abstract: UG-94 bs107 Contextual Info: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107	OCR Scan	VN2010L/BS107 N2010L BS107 O-226AA) ug-94 ha1100 UG-94	PDF
BS107 Abstract: MBB692 transistor bs107 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor	Original	BS107 SC13b SCA54 137107/00/01/pp12 BS107 MBB692 transistor bs107	PDF
VN2010L Abstract: S0427 siliconix marking code BS107 Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2	OCR Scan	VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM S-04279-- 16-Jul-01 O-226AA) S-0427 S0427 siliconix marking code	PDF

Contextual Info: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES	OCR Scan	BS107 -TO-92 MBB073	PDF
MAM146 Abstract: BP317 BS107 bs107 philips Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor	Original	BS107 SC13b SCA54 137107/00/01/pp12 MAM146 BP317 BS107 bs107 philips	PDF
BS107 Contextual Info: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic	OCR Scan	BS107 MIL-STD-202, DS21804 BS107	PDF
Philips DATA Handbook sc07 Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER	OCR Scan	BS107 Philips DATA Handbook sc07	PDF
bs107 transistor Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching	OCR Scan	BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification	PDF
BS107 Abstract: DS21804 vishay bs107 Contextual Info: BS107 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets KM TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208	OCR Scan	BS107 MIL-STD-202, DS21804 BS107 vishay bs107	PDF
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PINNING - TO -92 variant PIN CONFIGURATIO N FEATURES PIN • Direct interface to C-M O S, TTL,	OCR Scan	BS107 MBB073	PDF
DA218 Abstract: bs107 transistor BS107 Contextual Info: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208	Original	BS107 MIL-STD-202, DA21804 DA218 bs107 transistor BS107	PDF
Contextual Info: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208	Original	BS107 MIL-STD-202, DS21804	PDF
Contextual Info: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data • • • • Case: TO-92 Plastic	Original	BS107 MIL-STD-202, DS21804	PDF

BS107 TRANSISTOR Search Results

BS107 TRANSISTOR Result Highlights (5)

BS107 TRANSISTOR Datasheets Context Search

BS107A

TO-92-18RM

BS107

equivalent of BS107

BS-107C

VN2010L

equivalent of BS107

BS107 MOTOROLA

BS107

ha1100

BS107

VN2010L

MAM146

BS107

Philips DATA Handbook sc07

bs107 transistor

BS107

DA218