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    Samtec Inc IPBS-108-01-T-D-GP

    CONN HDR 16POS 0.165 TIN PCB
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    Samtec Inc BBS-108-G-A

    CONN HEADER VERT 8POS 2.54MM
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    Samtec Inc IPBS-108-01-T-D

    CONN HDR 16POS 0.165 TIN PCB
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    DigiKey IPBS-108-01-T-D Tube 392 1
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    Mouser Electronics IPBS-108-01-T-D 36
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    Newark IPBS-108-01-T-D Bulk 1
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    JRH Electronics BBS-108-G-B

    STACKING BOARD CONNECTOR, BOARD
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    DigiKey BBS-108-G-B Bulk 191 1
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    Samtec Inc BBS-108-T-A

    CONN HEADER 8POS .100 PCB TIN
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    DigiKey BBS-108-T-A Tube 67 1
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    BS108 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BS108 General Semiconductor DMOS Transistors (N-Channel) Original PDF
    BS108 Motorola 200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL Original PDF
    BS108 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original PDF
    BS108 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level Original PDF
    BS108 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BS108 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS108 Vishay Telefunken TRANS MOSFET N-CH 240V 0.23A 3TO-226AA Original PDF
    BS108 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BS108 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BS108 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Scan PDF
    BS108 Vishay N-CHANNEL ENHANCEMENT MODE TRANSISTOR Scan PDF
    BS108/01,126 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 300MA SOT54 Original PDF
    BS108,126 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 300MA SOT54 Original PDF
    BS108 AMO NXP Semiconductors N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; ID DC: 0.3 A; VDSmax: 200 V Original PDF
    BS108AMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BS108/D On Semiconductor 200 VOLTS N-HANNEL TMOS Original PDF
    BS108-D On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Le Original PDF
    BS108G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level Original PDF
    BS108ZL1 On Semiconductor Small Signal MOSFET 250 mA, 200 V, Logic Level N-Channel TO-92 Original PDF
    BS108ZL1 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original PDF

    BS108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D

    Untitled

    Abstract: No abstract text available
    Text: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7


    Original     		PDF BS108 MIL-STD-202, DS21801

    bs108 mosfet

    Abstract: mosfet to92 high current BS108 BS-108
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 bs108 mosfet mosfet to92 high current BS108 BS-108

    BS108

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    Original     		PDF BS108/D BS108 BS108

    Untitled

    Abstract: No abstract text available
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D

    BP317

    Abstract: BS108 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PDF BS108 SC13b SCA54 137107/00/01/pp8 BP317 BS108 MBB692

    bs108

    Abstract: MOTOROLA SEMICONDUCTOR FET FET TO-92 motorola power FET
    Text: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    Original     		PDF BS108/D BS108 BS108 O-226) BS108ZL1 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 MOTOROLA SEMICONDUCTOR FET FET TO-92 motorola power FET

    BS108

    Abstract: No abstract text available
    Text: BS108 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) 0.098 (2.5) Features • • • • • • • • • • • High breakdown voltage


    Original     		PDF BS108 O-226AA 10-May-02 BS108

    bs108 mosfet

    Abstract: BS108 relay driver BS108 BS108ZL1
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 r14525 BS108/D bs108 mosfet BS108 relay driver BS108 BS108ZL1

    BS108ZL1G

    Abstract: BS108 PPAP MANUAL bs108 mosfet
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D BS108ZL1G BS108 PPAP MANUAL bs108 mosfet

    DS21801

    Abstract: No abstract text available
    Text: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A


    Original     		PDF BS108 MIL-STD-202, DS21801

    bs108 mosfet

    Abstract: BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		PDF BS108 BS108/D bs108 mosfet BS108G BS108ZL1G BS108 BS108ZL1 PPAP MANUAL

    BS108

    Abstract: No abstract text available
    Text: BS108 DMOS Transistors N-Channel FEATURES TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. ∅ .022 (0.55) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance


    Original     		PDF BS108 BS108

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS N-Channel Enhancement Mode T his T M O S FET is d e s ig n e d fo r high v o lta g e , high sp e e d switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


    OCR Scan     		PDF BS108/D BS108 O-226AA)

    BS108

    Abstract: No abstract text available
    Text: BS108 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features_ • • High Breakdown V oltage High Input Im pedance • • • Fast Switching Speed Low D rain-Source O n-R esistance Specially Suited for Telephone Su TO-92 3tS Dim Min Max A 4.45 4.70


    OCR Scan     		PDF BS108 MIL-STD-202, DS21801 BS108

    ITT DIODE 129

    Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
    Text: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input


    OCR Scan     		PDF BS108 1000mA ITT DIODE 129 diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT

    8810

    Abstract: BS108 DS21801
    Text: BS108 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets KM h H TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — Mechanical Data_


    OCR Scan     		PDF BS108 MIL-STD-202, DS21801 BS108 8810

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL vDS PARAMETER MAX. UNIT


    OCR Scan     		PDF BS108

    Untitled

    Abstract: No abstract text available
    Text: hb53T31 0D2372h a7b APX iN AUER PHILIPS/DISCRETE b7E D • N-channel enhancement mode vertical D-MOS transistor Philips Semiconductors Product specification BS108 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT 200 V


    OCR Scan     		PDF hb53T31 0D2372h BS108

    interruptor

    Abstract: M9b07 MSB034
    Text: bb S B T S M Ü07ñfll4 3Dfl Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor — — ISIC3 Product specification BS108 b3E D NAPC/PHILIPS SEUICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET FEATURES


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TM OS BS108 N-Channel Enhancement Mode T his T M O S F E T is d e s ig n e d fo r high v o lta g e , high s p e e d switching applications such as line drivers, relay drivers, C M O S


    OCR Scan     		PDF BS108/D BS108 108/D

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan     		PDF 2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019

    Untitled

    Abstract: No abstract text available
    Text: VISHAY BS108 /uT E M ir N-CHANNEL ENHANCEMENT MODE TRANSISTOR I POWER SEMICONDUCTOR J Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets TO-92 Dim Min Max A 4.45


    OCR Scan     		PDF BS108 MIL-STD-202, DS21801

    PHC2300

    Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
    Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221


    OCR Scan     		PDF 2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT