IXXX200N60C3
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM IXXK200N60C3 IXXX200N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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20-60kHz
IXXK200N60C3
IXXX200N60C3
IC110
O-264
062in.
O-264)
O-264
PLUS247
IXXX200N60C3
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBTs GenX3TM IXXK200N60C3 IXXX200N60C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXK200N60C3
IXXX200N60C3
IC110
20-60kHz
O-264
200N60C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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20-60kHz
IXXK300N60C3
IXXX300N60C3
IC110
O-264
062in.
O-264)
O-264
PLUS247
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60C3
IC110
20-60kHz
O-247
100N60C3
0-10-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 650V IGBTs GenX4TM IXXK160N65C4 IXXX160N65C4 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 160A 2.1V 30ns TO-264 (IXXK) G C E Symbol Test Conditions Maximum Ratings
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IXXK160N65C4
IXXX160N65C4
IC110
20-60kHz
O-264
160N65C4
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100n60
Abstract: 100N60C3 IXXH100N60C3
Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60C3
IC110
20-60kHz
O-247
100N60C3
0-10-A
100n60
IXXH100N60C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXH100N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IC110
IXXH100N60C3
20-60kHz
O-247
100N60C3
0-10-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXK200N60C3 IXXX200N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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IC110
IXXK200N60C3
IXXX200N60C3
20-60kHz
O-264
200N60C3
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Untitled
Abstract: No abstract text available
Text: IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXXK100N60C3H1
IXXX100N60C3H1
20-60kHz
O-264
IF110
100N60C3
0-10-A
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100N60C3
Abstract: IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60
Text: Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXK100N60C3H1
IXXX100N60C3H1
20-60kHz
O-264
IF110
100N60C3
0-10-A
IXXK100N60C3H1
IXXX100N60C3H1
IF110
PLUS247
100n60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXK100N60C3H1
IXXX100N60C3H1
20-60kHz
O-264
IF110
Indu100
100N60C3
0-10-A
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LM33M
Abstract: No abstract text available
Text: LM337M Three-Terminal Adjustable Output Negative Voltage Regulator The LM337M is an adjustable three–terminal negative voltage regulator capable of supplying in excess of 500 mA over an output voltage range of –1.2 V to –37 V. This voltage regulator is exceptionally easy to use and
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LM337M
LM33M
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LM337 TO-92
Abstract: IC LM 351 LM337/KA741 equivalent LM337 TO92
Text: LM337 Three-Terminal Adjustable Output Negative Voltage Regulator The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and
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LM337
LM337 TO-92
IC LM 351
LM337/KA741 equivalent
LM337 TO92
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Untitled
Abstract: No abstract text available
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
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MT8870D
Abstract: MT8870D-1
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
MT8870D
MT8870D-1
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TDA 1060 f
Abstract: MT8870de dtmf decoder MT8870D MT8870D-1
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
TDA 1060 f
MT8870de dtmf decoder
MT8870D
MT8870D-1
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tda 2095
Abstract: MT8870D MT8870D-1
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
tda 2095
MT8870D
MT8870D-1
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tda 2032
Abstract: MT8870de dtmf decoder MT8870D MT8870D-1 TDA 1060 f zarlink MT8870DE
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
tda 2032
MT8870de dtmf decoder
MT8870D
MT8870D-1
TDA 1060 f
zarlink MT8870DE
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tda 2095
Abstract: MT8870DN/DN-1 MT8870D MT8870D-1
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
tda 2095
MT8870D
MT8870D-1
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Untitled
Abstract: No abstract text available
Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with
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MT8870D/MT8870D-1
MT8870C/MT8870C-1
MT8870DE/DE-1
MT8870DS/DS-1
MT8870DN/DN-1
MT8870D/MT8870D-1
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datasheet 6802 processor motorola
Abstract: 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN MT8889CS
Text: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/
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MT8889C
DS5433
MT8889CE
MT8889CS
MT8889CN
-30dBm
MT8870
datasheet 6802 processor motorola
68HC11
80C51
MT8889C
MT8889CE
MT8889CN
MT8889CS
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tda 2095
Abstract: DTMF mt8870 datasheet 6802 processor motorola microprocessors with mt8889 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN
Text: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/
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MT8889C
DS5433
MT8889CE
MT8889CS
MT8889CN
-30dBm
MT8870
tda 2095
DTMF mt8870
datasheet 6802 processor motorola
microprocessors with mt8889
68HC11
80C51
MT8889C
MT8889CE
MT8889CN
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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