BSC 60K Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

IXXX200N60C3

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM IXXK200N60C3 IXXX200N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: XPTTM 600V IGBTs GenX3TM IXXK200N60C3 IXXX200N60C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information XPTTM 650V IGBTs GenX4TM IXXK160N65C4 IXXX160N65C4 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 160A 2.1V 30ns TO-264 (IXXK) G C E Symbol Test Conditions Maximum Ratings

100n60

Abstract: 100N60C3 IXXH100N60C3
Contextual Info: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXH100N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXK200N60C3 IXXX200N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

100N60C3

Abstract: IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60
Contextual Info: Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

LM33M

Contextual Info: LM337M Three-Terminal Adjustable Output Negative Voltage Regulator The LM337M is an adjustable three–terminal negative voltage regulator capable of supplying in excess of 500 mA over an output voltage range of –1.2 V to –37 V. This voltage regulator is exceptionally easy to use and

Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

MT8870D

Abstract: MT8870D-1 TDA 1060 f X-TAL 3.579545 Mhz
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

MT8870D

Abstract: MT8870D-1
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

TDA 1060 f

Abstract: MT8870de dtmf decoder MT8870D MT8870D-1
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

tda 2095

Abstract: MT8870D MT8870D-1
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

tda 2032

Abstract: MT8870de dtmf decoder MT8870D MT8870D-1 TDA 1060 f zarlink MT8870DE
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

tda 2095

Abstract: MT8870DN/DN-1 MT8870D MT8870D-1
Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

Contextual Info: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with

datasheet 6802 processor motorola

Abstract: 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN MT8889CS
Contextual Info: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/

tda 2095

Abstract: DTMF mt8870 datasheet 6802 processor motorola microprocessors with mt8889 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN
Contextual Info: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/