BSC200P03LS G Search Results
BSC200P03LS G Price and Stock
Rochester Electronics LLC BSC200P03LSGP-CHANNEL POWER MOSFET |
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BSC200P03LSG | Bulk | 13,641 | 568 |
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Infineon Technologies AG BSC200P03LSGAUMA1MOSFET P-CH 30V 9.9/12.5A 8TDSON |
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BSC200P03LSGAUMA1 | Reel |
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Infineon Technologies AG BSC200P03LSGTrans MOSFET P-CH 30V 9.9A Automotive 8-Pin TDSON EP T/R |
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BSC200P03LSG | 8,671 | 657 |
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BSC200P03LSG | 13,641 | 1 |
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BSC200P03LS G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BSC200P03LS G |
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P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; | Original | 304.58KB | 9 | |||
BSC200P03LSGAUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12.5A TDSON-8 | Original | 440.7KB |
BSC200P03LS G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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BSC200P03LS IEC61249-2-21 200P03LS |