BSH 13 - N1 Search Results

03F8

Abstract: MC33784 A3 DIODE
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 2.0, 7/2008 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,

Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 3.0, 11/2009 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,

Introduction to accelerometers

Abstract: 03F8 MC33784 bsh 13 - n1
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33784 Rev 3.0, 11/2009 DSI 2.02 Sensor Interface 33784 The 33784 is a slave, Distributed System Interface Bus DBUS , version 2.02 compatible device, optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers,

bluetooth advantages and disadvantages

Abstract: japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package
Contextual Info: PF1084-05 S1C33 Family Data Sheets • S1C33 Family • S1C33000 Core • S1C33209 • S1C33T01 • S1C33L01 • S1C33S01 • S1C33221/222 • S1C33240 • S1C33210 • S1C33205/225/226/245 • S1C33L03 • S1C33 Family Development Environment • S1C33 Family Middleware and Firmware

Hitachi DSA00776

Abstract: HM5216165 HM5216165TT HM5216165TT-10 HM5216165TT-12 HM5216165TT-15
Contextual Info: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

HM5216165

Abstract: HM5216165TT HM5216165TT-10H HM5216165TT-12 HM5216165-10H Hitachi DSA00196
Contextual Info: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

HM5216165TT-10H

Abstract: HM5216165TT-12 HM5216165TT-15 HM5216165 HM5216165TT HM5216165TT-10 Hitachi DSA0015
Contextual Info: HM5216165 Series 524,288-word x 16-bit × 2-bank Synchronous Dynamic RAM ADE-203-280A Z Rev. 1.0 Dec. 20, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

HM5216165

Abstract: HM5216165TT HM5216165TT-10H HM5216165TT-12
Contextual Info: HM5216165 Series EO 16 M LVTTL Interface SDRAM 512-kword x 16-bit × 2-bank 100 MHz/83 MHz L E0167H10 (Ver. 1.0) (Previous ADE-203-280C (Z) Jun. 12, 2001 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2

Philips 3-Wire bus

Contextual Info: TO SHIBA TENTATIVE TD7623AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7623AFN 3-WIRE AND |2C BUS SYSTEM, 2.3GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623AFN can be combined with a micro CPU to create a highly functional frequency synthesizer. The

Hitachi DSA00164

Contextual Info: HM5216165 Series 16 M LVTTL Interface SDRAM 512-kword x 16-bit × 2-bank 100 MHz/83 MHz ADE-203-280C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

Nippon capacitors

Abstract: hitachi AND 1996 AND sdram
Contextual Info: HB526A164DB Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-606 Z Preliminary Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP

24C02

Abstract: HB526A164DB-10 HB526A164DB-12 HB526A164DB-15 HM5216165TT C100-C107 Hitachi DSA0015 DQ381 Nippon capacitors
Contextual Info: HB526A164DB Series 524,288-word x 64-bit × 2-bank Synchronous Dynamic RAM Module ADE-203-606 Z Preliminary Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP

TSB11C01

Abstract: TSB12C01APZ S200 S400 TSB12C01A
Contextual Info: 1394 Link Layer Controller chip TSB12C01A Errata: Last Changed on 07/06/96 - bsh, rgg 0. Electrical isolation as described in Appendex J of IEEE 1394-1995 is not supported by the TSB12C01APZ . TI has an improved isolation technique, that is the recommended isolation solution.

31ZA8

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280A Z Rev. 1.0 Dec. 20, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

Contextual Info: • ñ53SbGS DDTSTTS bSH ■ SIEMENS BTS6 1 2 N1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

Contextual Info: HB526A264EN-10/12 1,048,576-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-485B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: TO SHIBA TENTATIVE TD7628FN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7628FN 3-WIRE AND |2C BUS SYSTEM, 1.3GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR TV AND CATV The TD7628FN can be combined with a micro CPU to create a highly functional frequency synthesizer. The

HB526A164EN

Contextual Info: H B 5 2 6 A 1 6 4 E N -1 0 /1 2 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Hitachi DSA00174

Abstract: Nippon capacitors
Contextual Info: HB52RD168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-1097 (Z) Rev. 0.0 Sep. 10, 1999 Description The HB52RD168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: MITEL MH89791 CEPT PCM 30 Transm it Equalizer Advance Information 9161-002-110-NA Features • Used with the MH89790 • Programmable equalization for different line lengths • 6dB loop around circuit Description The MH89791 is a programmable network for use

Contextual Info: HB526A164EN-10/12 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary - Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

74VHC125

Abstract: 74VHC125M 74VHC125MTC 74VHC125N 74VHC125SJ M14A M14D MTC14 VHC125
Contextual Info: S E M IC O N D U C T O R Revised March 1999 TM General Description The VHC125 contains four independent non-inverting buff­ ers with 3-STATE outputs. It is an advanced high-speed CMOS device fabricated with silicon gate CMOS technol­ ogy and achieves the high-speed operation similar to

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.