BSM 50 GD 120 DLC Search Results
BSM 50 GD 120 DLC Price and Stock
Infineon Technologies AG BSM50GD120DLCBPSA1LOW POWER ECONO AG-ECONO2A-211 |
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BSM50GD120DLCBPSA1 | Tray |
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BSM50GD120DLCBPSA1 | Tray | 111 Weeks | 15 |
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BSM50GD120DLCBPSA1 | 77 | 2 |
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BSM50GD120DLCBPSA1 | 77 | 1 |
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Infineon Technologies AG BSM50GD120DLCBOSA1IGBT MOD 1200V 85A 350W |
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BSM50GD120DLCBOSA1 | Tray | 10 |
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BSM50GD120DLCBOSA1 | Tray | 111 Weeks | 10 |
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BSM 50 GD 120 DLC Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BSM50GD120DLC | Eupec | IGBT-Module - Diode Rectifier | Original | 188.24KB | 12 | |||
BSM50GD120DLC | Eupec | IGBT Module | Original | 113.85KB | 9 | |||
BSM50GD120DLC |
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TRANS IGBT MODULE N-CH 1200V 85A | Original | 179KB | 9 | |||
BSM50GD120DLCE3226 | Eupec | IGBT Power Module | Original | 89.16KB | 8 |
BSM 50 GD 120 DLC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IGBT FF 300 r12
Abstract: bsm 75 gal 120 dlc IS3, diode GAL 700 1200V-Types bsm 50 Gb 120 IGBT DN2E3224 is4 239 IGBT FZ 1200 r12 IGBT FZ 600 R12
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00V-Types E3224 E3226 200V-Types DN2E3224 120DN2 IGBT FF 300 r12 bsm 75 gal 120 dlc IS3, diode GAL 700 1200V-Types bsm 50 Gb 120 IGBT DN2E3224 is4 239 IGBT FZ 1200 r12 IGBT FZ 600 R12 | |
BSM 225Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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peak10 BSM 225 | |
E3226
Abstract: BSM 225
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E3226 E3226 BSM 225 | |
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage |
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E3226
Abstract: bsm 50 gd 120 dlc
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E3226 E3226 bsm 50 gd 120 dlc | |
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC E3226 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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E3226 E3226 | |
BSM 225Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage |
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Eupec Power Semiconductors 600v bsm
Abstract: bsm 50 gd 120 dlc 2900A
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bsm 50 gd 120 dlc
Abstract: k 246 transistor Eupec BSM Eupec Power Semiconductors 600v bsm IC-95 BSM 225
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bsm 50 gd 120 dlc
Abstract: E3226
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E3226 bsm 50 gd 120 dlc E3226 | |
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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2X80
Abstract: 3x200 D235G M100G
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6x150 2X80 3x200 D235G M100G | |
Eupec BSMContextual Info: Technische In form atio n /T ech n ical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC vorläu fige Daten p relim inary data H ö ch stzu lässig e W erte / M axim um rated values K o lle k to r-E m itte r-S p e rrs p a n n u n g VcES 600 V T c = 8 0 °C |
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thyristor tt 162 n 12
Abstract: thyristor tt 162 n thyristor TT 46 N thyristor TT 162 asymmetric thyristor thyristor tt 25 thyristor TD 25 N dd 55 n 14 powerblock powerblock tt 162 thyristor tt 105 n 16
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kuka-2006-de-inhalt thyristor tt 162 n 12 thyristor tt 162 n thyristor TT 46 N thyristor TT 162 asymmetric thyristor thyristor tt 25 thyristor TD 25 N dd 55 n 14 powerblock powerblock tt 162 thyristor tt 105 n 16 | |
EUPEC DD 105 N 16 L
Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
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thyristor tt 162 n
Abstract: fast thyristor 1000V thyristor tt 162 n 16 IGBT module FZ 400 thyristor TT 162 thyristor td 162 n Thyristor PIN CONFIGURATION thyristor tt 500 n 16 thyristor 162 THYRISTOR H 1500
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EUPEC tt 162 n 16
Abstract: thyristor tt 162 n high power thyristor module bsm 25 gp 120 igbt module bsm 100 gb 60 dl DISC THYRISTOR diode high power thyristor scr EUPEC tt 105 N 16 IGBT module FZ
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kuka-2003-inhalt EUPEC tt 162 n 16 thyristor tt 162 n high power thyristor module bsm 25 gp 120 igbt module bsm 100 gb 60 dl DISC THYRISTOR diode high power thyristor scr EUPEC tt 105 N 16 IGBT module FZ | |
7232-EContextual Info: Preliminary SIGC14T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60N 600V This chip is used for: • IGBT Modules G Applications: • drives |
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SIGC14T60N Q67041-A4689A001 320es 7232-E, 7232-E | |
Contextual Info: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives |
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SIGC18T60NC Q67050-A4139sawn 1400e 7242-M, | |
7262-MContextual Info: Preliminary SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives |
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SIGC25T60NC Q67050-A4143sawn 7262-M, 7262-M |