BSN01 Search Results

011NE2L

Contextual Info: BSN011NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 25 V RDS(on),max 1.1 mW ID 50 A QOSS 32 nC QG(0V.10V) 54

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

DIODE DS12

Abstract: BSN012N03LSI
Contextual Info: BSN012N03LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max 1.2

Contextual Info: BSN011NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 25 V RDS(on),max 1.1 mW ID 50 A QOSS 32 nC QG(0V.10V) 54

DIODE DS12

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

BSN012N03LS

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: BSN011NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 25 V RDS(on),max 1.1 mW ID 50 A QOSS 32 nC QG(0V.10V) 54

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

Contextual Info: BSN011NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 25 V RDS(on),max 1.1 mW ID 50 A QOSS 32 nC QG(0V.10V) 54

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: BSN012N03LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max 1.2

Contextual Info: BSN012N03LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max 1.2

MN1435

Abstract: mn1400 MN1430 MN1403 MN1451B MN1405 MN1456 7A SF mn1420 MN1455
Contextual Info: P A N A S O N I C I N D L / E L E K ÍIC} 7B 6932852 PANASONIC De | bT3EñS2 ODOSbúl 1 INDLtELECTRONIC ^P'í'CPOOyt^O.— 5 ? 4 - B ¡t M 72C 05681 ' - N 1 4 0 0 F a m D ?-/?-0? M N 1400 Family ily 4 tí *y h * l f 7 7 f * 7 ' Í ^ P 3 V í í a - ^ 4-B it Single-Chip Microcomputers

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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