BSP1 Search Results

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

MRC218

Abstract: MRC221
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

SP19A

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

BSP124

Abstract: MRC224 MTT 65 A 12 N depletion mode TRANSISTOR 436 Depletion
Contextual Info: Philips Semiconductors • 711Q6Eb Q Q b 7 fl 0 L 6H3 M PH I N Jroduct specification N-channel depletion mode vertical D-MOS transistor BSP124 QUICK REFERENCE DATA FEATURES PARAMETER MIN. MAX. UNIT - 250 V - 250 mA - 1.5 W open drain - 20 V lD = 20 mA; VGS = 0

BSP16T1

Abstract: BSP19AT1 SMD310
Contextual Info: ON Semiconductort NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

IC 2267

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Epitaxial Transistor BSP19AT1 Motorola Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223

brd8011

Abstract: BSP16T1G
Contextual Info: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value

BSP171P

Abstract: Q67041-S4019 BSP171
Contextual Info: BSP171P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated SOT-223 Type Package Ordering Code Marking BSP 171 P SOT-223

BSP129

Abstract: E6327 Q67000-S073 F035
Contextual Info: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Depletion mode I DSS,min 240 V 6 Ω 0.05 A • dv /dt rated • Available with V GS(th) indicator on reel PG-SOT-223 Type Package Ordering Code Tape and Reel Information

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

MRC218

Abstract: MBB691
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: bb53^31 0023645 Philips Semiconductors DO1! H A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N APIER PHILIPS/DISCRETE b?E T> QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

BSP19

Abstract: BSP16 BSP20 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product data sheet Supersedes data of 1997 Mar 03 1999 Jun 01 NXP Semiconductors Product data sheet NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING

MRC223

Abstract: BSP130 MRC21B
Contextual Info: Philips Semiconductors bb53S31 0023047 'ìfll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 N AMER P H IL IP S /D IS C R E T E FEATURES b7E D QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • No secondary breakdown.

TRANSISTOR marking 489 code

Abstract: Transistor 5331 bsp126 marking 113a UBB073 TB5 marking marking code 533-1 4006a
Contextual Info: BSP126 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and

ha 431 transistor

Abstract: BSP122 UBB073 transistor 431 N
Contextual Info: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

transistor marking code 325

Abstract: BSP110 marking r8v
Contextual Info: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer

Contextual Info: S0T223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSP120 ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE SYMBOL Drain-Source Voltage V DS Continuous Drain Current at Ta = 25°C UNIT 200 V 250 mA mA Pulse Drain Current 'dm 800 Gate-Source Voltage v gs ±20 V 1.5

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ FEATURES * High V CE0- 350V * Low saturation voltage C O M PLEM EN TA RY T Y P E - BSP16 PARTMARKING D E T A IL - BSP19 ABSOLUTE MAXIMUM RATINGS. SYM BO L PARAM ETER

D460

Contextual Info: BSP171P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101