BSS138 MARKING Search Results

L55 SOT23

Abstract: bss138 BSS138 50V
Contextual Info: BSS138 N-Channel Enhancement Mode Vertical DMOS FET BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling APPLICATIONS

K38 SOT-23

Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23

K38 SOT-23

Abstract: BSS138 BSS138* spice model TRANSISTOR K38 94v0 c-05 pcb BSS138-7 BSS138-7-F marking k38 transistor bss138 bss138 k38
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B C Low Input/Output Leakage G TOP VIEW S Available in Lead Free/RoHS Compliant Version Note 3

BSS138* spice model

Abstract: K38 SOT-23 DS30144 K38 sot23 TRANSISTOR K38 bss138 BSS138/BSS138* spice model BSS138-7 MARKING k38 SOT23 BSS1381
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·

BSS138

Abstract: bss138 MARKING BSS138 50V 0.2A
Contextual Info: BSS138 N-Channel Enhancement Mode Vertical DMOS FET caioqic CORPORATION BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling

BSS138* spice model

Abstract: bss138 K38 SOT-23
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23

K38 SOT-23

Abstract: BSS138* spice model BSS138 BSS138-7-F bss138 MARKING bss138 k38 DS30144
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant Note 3 D

Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·

BSS138 TO236

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

K38 SOT-23

Abstract: equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

BSS138G

Abstract: BSS138 TO236 BSS138
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves

BSS138G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

bss138 MARKING

Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

PHILIPS DMOS FET

Contextual Info: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223

BSS138G-AE3-R

Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

K38 SOT-23

Abstract: marking k38
Contextual Info: BSS138 ADVANCE INFORMATION N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · ·

BSS138

Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020  Low Input/Output Leakage 

K38 mosfet

Abstract: BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

BSS138

Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

equivalent transistor k38

Abstract: K38 SOT-23 bss138 k38
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Note 3

BSS138-7

Abstract: BSS138 transistor bss138 bss138 MARKING
Contextual Info: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)