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    Philips Semiconductors BSX59

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    BSX59 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSX59 Central Semiconductor NPN Silicon Transistor Original PDF
    BSX59 Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO39 / Vceo=45 / Ic=1 / Hfe=25min / fT(Hz)=- / Pwr(W)=0.8 Original PDF
    BSX59 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=45 / Ic=1 / Hfe=25min / fT(Hz)=- / Pwr(W)=0.8 Original PDF
    BSX59 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    BSX59 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BSX59 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BSX59 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BSX59 Motorola European Master Selection Guide 1986 Scan PDF
    BSX59 Motorola SWITCHING TRANSISTORS(NPN) - Pol=NPN / Pkg=TO39 / Vceo=45 / Ic=1 / Hfe=25min / fT(Hz)=- / Pwr(W)=0.8 Scan PDF
    BSX59 Mullard Quick Reference Guide 1977/78 Scan PDF
    BSX59 Mullard Silicon NPN Transistor Scan PDF
    BSX59 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSX59 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSX59 Unknown Transistor Replacements Scan PDF
    BSX59 Unknown Transistor Replacements Scan PDF
    BSX59 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSX59 Unknown Transistor Replacements Scan PDF
    BSX59 Unknown Transistor Replacements Scan PDF
    BSX59 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSX59 Unknown Transistor Replacements Scan PDF

    BSX59 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSX59

    Abstract: No abstract text available
    Text: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSX59 O205AD) 1-Aug-02 BSX59

    BSX59

    Abstract: BSX61 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX59; BSX61 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN switching transistors


    Original     		PDF M3D111 BSX59; BSX61 MAM317 SCA54 117047/00/02/pp8 BSX59 BSX61 BP317

    BSX59

    Abstract: No abstract text available
    Text: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSX59 O205AD) 17-Jul-02 BSX59

    Untitled

    Abstract: No abstract text available
    Text: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSX59 O205AD) 19-Jun-02

    bsx61

    Abstract: BSX59
    Text: Philips Semiconductors Product specification NPN switching transistors BSX59; BSX61 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching in industrial applications.


    OCR Scan     		PDF BSX59; BSX61 BSX59 BSX61

    BSX59

    Abstract: BSX60 BSX61 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530
    Text: BSX59 to 61 PHILIPS INTERNATIONAL St>E » • 7110ßHb 0042422 STl MPHIN “F 2 7 - Z 3 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.


    OCR Scan     		PDF BSX59 00H2M22 F27-Z3 BSX59, BSX60 BSX61 BSX61 Z82449 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530

    BSX59

    Abstract: bu 11 apx BSX60 WE VQE 11 E WE VQE 24 E BSX61 silicon planar epitaxial transistors
    Text: N AMER PHI LI PS/DISCRETE b'IE D • 0027^33 T37 I IAPX BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.


    OCR Scan     		PDF BSX59 BSX59, BSX60 BSX61 BSX61 bu 11 apx WE VQE 11 E WE VQE 24 E silicon planar epitaxial transistors

    BSX59

    Abstract: BSX60 BSX61 TO-39 CASE 435-1824
    Text: Bata Sheet BSX59 BSX60 BSX61 S e llllC D Iia U C IO i G O fp. NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSX59 series types are NPN Silicon Transistors designed for high speed switching


    OCR Scan     		PDF BSX59 BSX60 BSX61 BSX59 BSX60 BSX61 TO-39 CASE 435-1824

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE • LIE D bbS3^31 DD27T33 T37 BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.


    OCR Scan     		PDF DD27T33 BSX59 BSX59, BSX60 BSX61 BSX59 BSX60 b53T31 00371ME

    BSX59

    Abstract: BSX60 BSX61 toilt MULLARD BSX59-Page MULLARD TRANSISTOR bay36
    Text: BSX59 SILICON PLANAR EPITA X IA L N-P-N TRANSISTORS 3 ^ . ^ BSX6Q B S X 6 1 Silicon p la n a r epitaxial n -p ^ J fira n s is to rs intended fo r u se in v ery high speed c o re d riving applications QUICK R EFEREN CE DATA BSX 5 9 V ^ m ax. CBO V _ m ax. CEO


    OCR Scan     		PDF BSX59 BSX60 -80mA) 500mA, BSX59 25min. BSX60 BSX61 toilt MULLARD BSX59-Page MULLARD TRANSISTOR bay36

    BSX69

    Abstract: 2N3725 MOTOROLA BSX60 BAY38 BSX59 2N3725 BSX61 HA 7904
    Text: M O T O R O L A SC XSTRS/R F 12E D I 131755»« QOflbSOb 7 | BSX59 BSX60 CASE 79-04, STYLE 1 TO-39 TQ-205AD M A X IM U M RATINGS S ym b o l BSX 59 C ollector-E m itter Voltage VCEO 45 30 Vdc C ollector-E m ltter Voltage VC ES 60 60 Vdc Collector-Base Voltage


    OCR Scan     		PDF BSX59 BSX60 2N3725 BSX59] BSX60] BAY38 BSX61 BSX69 2N3725 MOTOROLA BSX60 HA 7904

    tube az2

    Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
    Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)


    OCR Scan     		PDF BSS38 BSW41A T0-18 BSX19 BSX20 BSX21 BSY95A h--22-> crt6-25 tube az2 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


    OCR Scan     		PDF BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369

    BD320C

    Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
    Text: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.


    OCR Scan     		PDF BSX59 BSX60 BSX61 2N3261 2N3512 O-390 TIP122 T0-220 TIP127 TIP121 BD320C 2N3725 tip122 tip127 BD321A TlPl22 2N3724 BD320A BD320B

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    MM4003

    Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


    OCR Scan     		PDF

    KD502

    Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
    Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71


    OCR Scan     		PDF 101NU70 102NU70 103NU70 104NU70 105NU70 106NU70 107NU70 101NU71 102NU71 103NU71 KD502 KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


    OCR Scan     		PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118