BT 173 Search Results

Contextual Info: FAST CMOS 16-BIT REGISTERED TRANSCEIVER IDT54/74FCT16952AT/BT/CT/ET IDT54/74FCT162952AT/BT/CT/ET IDT54/74FCT162H952AT/BT/CT/ET Integrated Device Technology, Inc. FEATURES: ET 16-bit registered transceivers are built using advanced dual metal CM OS technology. These high-speed, low-power

CCIR Report 624-4

Abstract: filter ccir 624 itu Report 624-4 f3067 ISO STANDARDS for radio broadcasting 1448T D-Subminiature Connectors BT601-5
Contextual Info: Rec. ITU-R BT.601-5 1 SECTION 11B: DIGITAL TELEVISION RECOMMENDATION ITU-R BT.601-5 STUDIO ENCODING PARAMETERS OF DIGITAL TELEVISION FOR STANDARD 4:3 AND WIDE-SCREEN 16:9 ASPECT RATIOS Question ITU-R 206/11 (1982-1986-1990-1992-1994-1995) Rec. ITU-R BT.601-5

KM428C257

Abstract: bt 0240 adapter dell circuit diagram of motherboard xps YMF27 BtV2115 024c vcr Dell Dimension yamaha opl2 ymf 282 compaq 486 motherboard diagram
Contextual Info: Advance Information Bt This document contains information on a product under development. The parametric information contains target parameters that are subject to change. BtV2115 MediaStream Controller Applications Related Products Distinguishing Features

Contextual Info: PRELIMINARY DATA SHEET SKY85202-11: 2.4 GHz, 802.11ac Switch/Low-Noise Amplifier Front-End Applications VBATT BT • WiFi-enabled handsets, tablets, and mobile systems  System-in-Package SiP modules for embedded systems  802.11n/ac smartphones and tablets

Contextual Info: Extract from the online catalog FL BT MOD IO AP Order No.: 2884758 Factoryline Wireless Bluetooth Modbus I/O Access Point, Modbus TCP; Bluetooth V2.0, frequency band 2.4 GHz; 1 wireless

BGB203

Abstract: philips designer guide bgb203 bluetooth test mode Bluetooth bt-20 bluetooth pinout BDB203002231 BT-20 RS-232 Philips DTR 1000
Contextual Info: UM_1SPP BGB203 BT 2.0 Serial Port Profile Module User’s Guide Rev. 1.0.3 — 21 December 2005 Document information Info Content Keywords BGB203 ; Serial Port Profile ; Bluetooth Abstract User’s Guide for the BGB203 Bluetooth 2.0 Serial Port Profile Module.

CTX12

Contextual Info: PRELIMINARY DATA SHEET SKY85202-11: 2.4 GHz, 802.11ac Switch/Low-Noise Amplifier Front-End Applications VBATT BT • WiFi-enabled handsets, tablets, and mobile systems  System-in-Package SiP modules for embedded systems  802.11n/ac smartphones and tablets

Contextual Info: Advance Data Sheet February 1994 A T bT Microelectronics ATT2MD01 100VG-AnyLAN MAC and EISA/ISA System Interface Features and Benefits • Supports the proposed IEEE 802.12 100VG-AnyLAN specification as of January 1994 — Enables 100 Mbits/s transmissions over

Contextual Info: DATA SHEET SKY85202-11: 2.4 GHz, 802.11ac Switch/Low-Noise Amplifier Front-End Applications VBATT BT • WiFi-enabled handsets, tablets, and mobile systems  System-in-Package SiP modules for embedded systems  802.11n/ac smartphones and tablets Features

1736a

Contextual Info: NICHIA STS-DA1-1736A <Cat.No.110622> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR W H I TE LED N SSW 2 0 4 BT Pb-free Reflow Soldering Application RoHS Compliant NICHIA STS-DA1-1736A <Cat.No.110622> SPECIFICATIONS 1 Absolute Maximum Ratings Symbol Absolute Maximum Rating

TRANSISTOR c 5578 B

Abstract: 603 transistor npn
Contextual Info: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is

AN9321

Abstract: RFP50N06 AN-7517 RFP22N10 RFP3055 RFP45N06 RFP70N06 ierc heatsink
Contextual Info: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N95 bt actipect f ng werOS antors ve uce ads utho eyrds ter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid

Crystals

Abstract: BT 816 F38X F494 BT 816 transistor smd transistor A1s F39F SMD A1S 431700 a1s smd
Contextual Info: SMD Quartz Crystals FILTRONETICS SMD XTAL MODELS SIZE mm LXWXH CUT MODE OF TYPE OPER. CIRCUIT COND. CALIBRATION AT 25°C - - - - - ±50 ppm ±100 ppm/–20 to 70°C (AT-CUT) See Table 7 0.1mW 3.579545 MHz to 100.000000 MHz AT BT SEE ORDERING METHOD TABLE

transistor a473

Abstract: A473 transistor conhex chip die npn transistor CML ECL compatible
Contextual Info: HONEYWELL "DIGITAL PRODUCT bt. dË | MSS1M5B ODOOOEt. T f' T-42-11-13 MARCH 1985 ECL GATE ARRAY HE2000 PRODUCT DESCRIPTION The HE2000 Gate Array Figure 1 is a 300 picosecond, 2000 equivalent gate density Very Large Scale Integration (VLSI) monolithic integrated circuit built using Honeywell’s

bt 33 f

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

MX489J

Abstract: MX489 MX489DW
Contextual Info: A/VX • QDAA, INC. mx489 Preliminary Information GMSK MODEM: 4,000 BPS TO 19,200 BPS FEATURES • Single Chip Modem • Full- or Half-Duplex Operation • Meets MOBITEX Specification • Selectable BT 0.3 or 0.5 • Serial RX and TX Data Interfaces • RX and TX Data Clock Generation

Contextual Info: 73 SurfaceMountWideBandRFTransformers Available in both 1:1 and 2:1 impedance versions, Coilcraft’s W BT Series chip transformers provide wide band pass performance in a small surface mount package. The transformers are built on an 1812 size ferrite body with a ceramic base. The top is a high tem ­

Contextual Info: P /N APPLICABLE NOTE S CC 1,2 ZONE REV DATE Bt EPOXY CAPTIVATION (2X 0 .1 0 2 ) 5611 SMA MALE INTERFACE PER M IL -S T D -3 4 8 NOTES(S): 1. MATERIAL(S): 1.1 BODY & COUPLING NUT: 3 0 3 SST PER ASTM A - 5 8 2 . 1.2 CENTER CONDUCTOR & RETAINING RING: BeCu ALLOY C 173 PER ASTM B - 1 9 6 .

BT 199

Abstract: jyy4
Contextual Info: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

Contextual Info: THERMISTOR CONVERSION TABLES CURVE 1 RESISTANCE-TEMPERATURE CONVERSION TABLE R t/R 2s TEMP. X -4 0 Bt/R25 TEMP. R ,/R 25 X TEMP. °C R»/R25 TEMP. • y fl2 5 X CURVE 4 TEMP. °C RESISTANCE-TEMPERATURE CONVERSION TABLE Rt/R25 Rt/R 28 TEMP. R|/R25 °C TEMP.

IGBT 500V 50A

Abstract: "Power Diode" 500V 50A
Contextual Info: International m l Rectifier Provisional Data Sheet P D -9 .1155 IRGTIN050M06 Low conduction loss IG BT "HALF-BRIDGE" IG B T INT-A-PAK V Œ = 6 00V lc = 50A V ce O N < 2 ,O V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

Contextual Info: s e MIKRO n Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc ICM V ges = 20 k£2 Tease = 25/80 °C Rge Tease = 25/80 °C; tp = 1 ms p e r IG BT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes If= - lc IfM= - IcM Tease = 25/80 °C

Contextual Info: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are

Contextual Info: ANALOG DEVICES HghOliality, 10-Bt, Dgtä OQRG01 to P/UN193VideoEroder ZO/7175/V/0 /7176A* FEATURES ITU-R B T601/656 YCrCb to PAL/NTSC Video Encoder High Quality 10-Bit Video DACs Integral N onlinearity <1 LSB at 10 Bits N TSC -M , P AL-M /N , P A L -B /D /G /H /I