BTJS3T31 Search Results

42t SOT23

Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40
Contextual Info: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.

BDV95

Abstract: BDV91 BDV93 BDV96 BDV92 BDV94
Contextual Info: BDV91 BDV93 BDV95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic S O T -93 envelope. These transistors are intended fo r use in audio o utpu t stages and general am plifier and switching applications. P-N-P complements are B D V 92 , B D V 9 4 and B D V 96.

Contextual Info: N AMER PHILIPS/DISCRETE b'JE ]> • bbS3T31 DDHbb37 =142 H A P X _ J BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used

BDT63BF

Abstract: 63BF BDT*63CF BDT63CF BDT63F 63CF AI mm sot 553 BDT62AF BDT62BF BDT62CF
Contextual Info: BDT63F; BDT63AF I ^BDT63BF; BPT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S 0 T 1 8 6 envelope w ith an electrically insulated mounting base. Th e devices are designed fo r audio output stages and general am plifier and switching applications.

BC560

Contextual Info: N AMER PHILIPS/DISCRETE b'lE I> bbSaiBl QQE7S81 Tbb BC559 BC560 _ ; v _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.