BTS 4142 N Search Results

S6120

Abstract: 4141N GPS05560 Q67060-S6120 Q67060-S6127 VPS05163
Contextual Info: BTS 4141N Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)

4142N

Abstract: GPS05560 Q67060-S6121 Q67060-S6128 VPS05163
Contextual Info: BTS 4142N Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)

4141d

Abstract: S6098 6 GPT09161 Q67060-S6098
Contextual Info: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)

9z24

Contextual Info: SFW/I9Z24 Advanced Power MOSFET FEATURES BVqss - "60 V • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 pA Max. @ VOS= -60V

TLE7201

Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do

TLE7245G

Abstract: tle7245 3 phase scr firing circuit for dc servo driver tle7242 brushless motor 6236 driver solenoid driver circuit 8051 MT 6225 BTS 462 T BTS224Z ic 3207 gp
Contextual Info: Automotive Power Selection Guide May 2007 Ultimate POWER – Perfect Control COMPLETE automotive solutions from Infineon www.infineon.com/automotivepower Introduction The Ultimate Power to Control Automotive and Transportation Applications I F Y O U A R E L O O K I N G F O R a comprehensive and dependable portfolio of

IRFr010

Contextual Info: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142

cn/A/U 237 BG

Contextual Info: KS5513C BI-CMOS INTEGRATED CIRCUIT OSD IC WITH SYNC SEPARATOR 32-SDIP-400 KS5513C is a monolithic IC that has On-Screen-Display function and internal sync separator. FUNCTION • On-Screen-Dlsplay OSD • Sync separator FEATURES • Maximum number of displayable characters: 240

KS0106

Abstract: KS0105
Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0106 50 CHANNEL SEGM ENT DRIVER FOR DOT M ATRIX LCD The KS0106 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. This device consists of Display Data RAM, 50 bit data latch, 50 bit driver and decoder cir­

Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM SPECIFICATION REVISION HISTORY REV. NO. 0.0 SUMMARY DATE Initial Release 1997. 1. 29 • • • » • • • • • • • • Rev 0.0 ELECTRONICS • 7^4142 00372^7 AIT PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM

KF353

Contextual Info: KF353D Industrial ELECTRONICS DUAL OPERATIONAL AMPLIFER 8 DIP The KF353 is a JFET input operational amplifier with an internally compensated input offset voltage. The JFET input device provides with bandwidth, low input bias currents and offset currents. FEATURES

Contextual Info: IRLW/I520A Advanced Power MOSFET FEATURES b v dss = 100 V = 0.22 Q • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 9.2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175» «Operating Temperature

km 1667

Abstract: KM732V696-13 KM732V696-15 KM732V6961
Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM Rev 0.0 ELECTRONICS 7*^4142 0G372b7 fllT This Material Copyrighted By Its Respective Manufacturer PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM 64K x 32 - Bit Synchronous Pipelined Burst SRAM FEA T U R ES G E N E R A L DESCRIPTIO N

Contextual Info: KMM364E803AK/AS KMM364E883AK/AS DRAM MODULE KMM364E803AK/AS & KMM364E883AK/AS Fast Page with EDO Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM364E80 8 3A is a 8M bit x 64 • Part Identification

QAC22

Abstract: ez 948 ic
Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its

4142N

Abstract: IEC 61967-4 GPS05560 SP000221218 PG-SOT22 ITS4142N
Contextual Info: ITS 4142N Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ 47 V • Current limitation Operating voltage Vbb(on) 12.45 V • Overload protection

4141d

Abstract: GPT09161
Contextual Info: ITS 4141D Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ 47 V • Current limitation Operating voltage Vbb(on) 12.45 V • Overload protection

4141N

Abstract: SP000219536 ITS4141N GPS05560 scr short circuit
Contextual Info: ITS 4141N Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ 47 V • Current limitation Operating voltage Vbb(on) 12.45 V • Overload protection

KM48C2104B

Contextual Info: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

Contextual Info: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

T3.15A 392 fuse

Abstract: bel t3 15a 250v BTS 7246 mov rdn 240 FLOPPY DISK CONTROLLER MITSUBISHI SCK032 BTS 308 BTS 4320 EPM7128 tms 2370
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog