BU 450 BDX Search Results

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

Contextual Info: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

Contextual Info: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •

TRANSISTOR BDX

Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

U/25/20/TN26/15/850/yd 803 ic

Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520

BUX47A

Abstract: BUX47 BUX47B BY205-400
Contextual Info: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

BU106

Abstract: 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V

Contextual Info: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

2N6214

Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TIP29

Abstract: BUX84 BUX85 lb102
Contextual Info: TEXAS INSTR -COPTO} D F f i T b l 75 b QOHbbbT ti Ô 9 6 1 7 2 6 - TE XA S INSTR <OPTO) 62C 36669 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS ~ T - 3 3 '/ NOVEMBER 1 983 - REVISED OCTOBER 1984 40 W at 25°C Case Temperature 2 A Continuous Collector Current

2N6179

Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

ELECTRONIC BALLAST DIAGRAM 400W

Abstract: ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W
Contextual Info: CAT RE-GEN COVER 02:CAT RE-GEN COVER 02 12/03/2010 16:06 Page 32 Europe Headquarters: Venture Lighting Europe Ltd. Trinity Court Batchworth Island Church Street, Rickmansworth, WD3 1RT, United Kingdom + 44 0845-2302222 Fax: +(44) 0845-2302077 sales@venturelighting.co.uk

357 opto

Abstract: BUX48 BUX48A BY205-400 npn 1000V 15A
Contextual Info: T EX AS I NS TR -COPTO! ~ tà D E T J f l'ib lT E b 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO 62C □ □ 3h b 4 36649 BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature •

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

bux81

Abstract: BUX80
Contextual Info: TEXAS INSTR {OPTO} 6961726 TE X A S b5 IN S TR DE IflTblTab 003bbS7 □ 62C <OPTO 3Ò657 BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS /- 7 3-/3 O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 1 5 0 W a t 2 5 ° C C ase T em p eratu re 1 0 A Continuous C ollector C urrent

BUX83

Abstract: BUX82 gg3b
Contextual Info: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047

2N3440 2N5416 REPLACEMENT

Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .