BU326A TRANSISTOR Search Results

BU326A

Abstract: BU326
Contextual Info: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN

BU326A

Abstract: BU326
Contextual Info: BU326A  HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: ■ POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN

bu326

Abstract: BU326A
Contextual Info: BU326 BU326A SGSTHO M SON HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. ABSOLUTE M AXIM UM RATINGS Value

Contextual Info: SGS-mOMSON MOgn ia,ieiri®i0 Di BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN

BU326A

Abstract: BU326
Contextual Info: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN

bu326a

Abstract: bu326
Contextual Info: 7^537 0056557 0 • *T" 3>~S-\3 SGS-THOMSON M tg[^ »[i(M i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case particularly intended for switch-mode CTV supply

BU326

Abstract: BU326A
Contextual Info: SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies.

NPN 800V

Abstract: NPN VCEO 800V BU326A
Contextual Info: NPN BU326A SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25 °C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 DESCRIPTION

NPN Transistor 1A 400V

Abstract: BU326A BU326
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper

BU326A Transistor

Contextual Info: ., U na. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BU326A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: V C EO(sus)=400V(Min) • Low Collector-Emitter Saturation Voltage:V C E(sat)=1.5V(Max.)@lc=2.5A

BU326A

Abstract: BU326
Contextual Info: HIGH VOLTAGE POWER TRANSISTOR NPN BU326 The BU326 and BU326A Type are a fast switching high voltage transistor,more specially intended for operating in color TV receivers chopper supplies. Boca Semiconductor Corp. BSC http ://www.bocasemi.com FEATURES: * Coiiector-Emitter Sustaining Voltage v ceo sus = 375 V (Min.) - BU326

lg crt tv circuit diagram

Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Contextual Info: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS

BU326

Abstract: BU326A BU326-BU326A
Contextual Info: INSTR -COPTO} DE 0 0 3 t , t , a cl S Ô961726 TEXAS INSTR ~<OPTO> 62C 36629 r - i s - v BU326,BU326A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 2 5 °C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

IR 92 0151

Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.

bu800

Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503
Contextual Info: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont

BU2080

Contextual Info: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9

BU208D

Abstract: BU208 BU208A 2SD870 BDY38 BOY20 BU2080 2SC1942 2SD1168 2SD1168P
Contextual Info: TO-3 Power Package Transistors NPN Maximum Ratings Type No. V CBO VCEO V EBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) •c Po (W) (A) To=25°c ICBO V CB •c e s V CE (MA) Max 0 (V) (MA) Max (V) 10 e

BDY38

Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869
Contextual Info: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES

BDY20

Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
Contextual Info: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB