BU406 CROSS Search Results

Contextual Info: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L

Contextual Info: BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in

Contextual Info: MOTOROLA Order this document by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV ’s and CRT’s. • • • • 7 AMPERES NPN SILICON

BU40

Abstract: MOTOROLA TRANSISTOR transistor BU406 BU406 BU407
Contextual Info: MOTOROLA Order this document by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON

bu406 cross

Abstract: BU406TU
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

transistor BU406

Abstract: BU406 BU406H BU408
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

bu408

Abstract: BU406
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage

bu408 equivalent

Abstract: BU408 BU406 BU406H
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current

transistor BU406

Abstract: BU407 BU406 IC7A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POW ER TRANSISTORS 60 WATTS

Contextual Info: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage

bu406

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL

BU406

Abstract: BU407 transistor BU406
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC

BU406D

Abstract: S-60W bu407d
Contextual Info: MOTORGLA s c XSTRS/R F 15E D | fc,3b?2S4 0004011 2 | ^33"// MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406,D BU407,D NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV's and CRT's. • •

Contextual Info: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage

BU406

Contextual Info: ON Semiconductor BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max)

BU406

Abstract: BU407
Contextual Info: ON Semiconductort BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max

Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic VcBO Sym bol 400 V C ollector-E m itter Voltage VcEO 200 V Em itter-Base Voltage

transistor equivalent of BU406

Abstract: bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

Contextual Info: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage Fast Switching Speed Low Saturation Voltage These Devices are Pb−Free and are RoHS Compliant*

transistor BU406

Abstract: bu406d BU406 7A60W
Contextual Info: HORIZONTAL DEFLECTION TRANSISTOR NPN BU406/D, 7A 60W Technical Data … for Horizontal deflection output stages of TV’s and CRT’s. F Collector-Emitter Voltage-VCEV=400Vdc F Low Saturation Voltage:VCE sat =1V(max)@5A F TO-220 Package F Fast Switching Speed:tf=750 ns(max)

BU407

Contextual Info: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A

BU40x

Contextual Info: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A

BU407

Abstract: BU406 BU406G BU407G
Contextual Info: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A