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    BU407G Search Results

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    BU407G Price and Stock

    Taiwan Semiconductor KBU407G

    BRIDGE RECT 1PHASE 1KV 4A KBU
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    DigiKey KBU407G Tray 1,160 1
    • 1 $1.54
    • 10 $1.282
    • 100 $1.02025
    • 1000 $0.73245
    • 10000 $0.66967
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    Avnet Americas KBU407G Tray 9 Weeks 500
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    • 1000 $0.58793
    • 10000 $0.58793
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    TME KBU407G 1
    • 1 $1.63
    • 10 $1.47
    • 100 $1.29
    • 1000 $1.08
    • 10000 $0.97
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    EBV Elektronik KBU407G 12 Weeks 500
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    Taiwan Semiconductor KBU407G T0G

    BRIDGE RECT 1PHASE 1KV 4A KBU
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    DigiKey KBU407G T0G Tray
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    onsemi BU407G

    Bipolar (BJT) Single Transistor, NPN, 150 V, 7 A, 60 W, TO-220AB, Through Hole - Rail/Tube (Alt: BU407G)
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    Avnet Americas BU407G Tube 4 Weeks 1
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    Rochester Electronics BU407G 230 1
    • 1 $0.3299
    • 10 $0.3299
    • 100 $0.3101
    • 1000 $0.2804
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    BU407G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BU407 NPN SILICON TRANSISTOR N PN EX PI T AX I AL PLAN AR T RAN SI ST OR ̈ DESCRI PT I ON The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. ̈ 1 TO-220 FEAT U RES


    Original
    PDF BU407 BU407 O-220 BU407L BU407G BU407-x-TA3-T BU407L-x-TA3-T BU407G-x-TA3-T QW-R203-020

    BU40x

    Abstract: No abstract text available
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A


    Original
    PDF BU406, BU407 BU406 BU406/D BU40x

    BU407G

    Abstract: BU407
    Text: UNISONIC TECHNOLOGIES CO., LTD BU407 NPN SILICON TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. „ 1 TO-220 FEATURES * High breakdown voltage


    Original
    PDF BU407 BU407 O-220 BU407L BU407G BU407-x-TA3-T BU407L-x-TA3-T BU407G-x-TA3-T QW-R203-020 BU407G

    BU407

    Abstract: BU406 BU406G BU407G
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A


    Original
    PDF BU406, BU407 BU406 BU406/D BU407 BU406 BU406G BU407G

    Untitled

    Abstract: No abstract text available
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage Fast Switching Speed Low Saturation Voltage These Devices are Pb−Free and are RoHS Compliant*


    Original
    PDF BU406, BU407 BU406 BU406/D

    transistor BU406

    Abstract: BU406G BU406 BU407 BU407G
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A


    Original
    PDF BU406, BU407 BU406 BU406/D transistor BU406 BU406G BU406 BU407 BU407G

    BU407

    Abstract: No abstract text available
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A


    Original
    PDF BU406, BU407 BU406 BU406/D BU407