BU4506 Search Results

BU4506AF

Abstract: BU4506DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television

BU4506DF

Abstract: BU4506D
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features

BU4506AX

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506AF

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

Contextual Info: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope w ith integrated d am per diode intended fo r use in horizontal deflection circuits of colour television

bu4506dx

Abstract: BU4506DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features

BU4506AZ

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506AX

Abstract: BU4506DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506AF

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506DF

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features

BU4506DF

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features

BU4506AF

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television

bu4506df

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features

BU4506AX

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

4506DX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor w ith integrated diode in a plastic fu ll-p a ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features

BU4506AZ

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BU4506AX

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional

BUT11APX equivalent

Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Contextual Info: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction