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    BUA DIODE Search Results

    BUA DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BUA DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    INVERTER invertron GMI

    Abstract: reliance electric invertron INVERTRON GMI Invertron Vti DBU-400 DBU-200 DBU-50 837.02.01 reliance inverter gp2000 dbu-100
    Text: INVERTRON DBU Dynamic Braking Unit Instruction Manual C Manual P/N. UL R 899.05.26 User Manual: 49‘1328e 06 Publication INVDBU-UM006F-EN-P . TABLE OF CONTENTS 1. DESCRIPTION 1-1.1-2 Operation . 1-1


    Original     		PDF 1328e INVDBU-UM006F-EN-P INVERTER invertron GMI reliance electric invertron INVERTRON GMI Invertron Vti DBU-400 DBU-200 DBU-50 837.02.01 reliance inverter gp2000 dbu-100

    diode smd marking BUF

    Abstract: smd diode code buh diode smd marking "BBE" diode smd marking BUE diode smd marking BBf smd code buz smb smd code buh diode smd marking "BUF" diode smd marking BUA diode smd marking "BUE"
    Text: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodes designed


    Original     		PDF SMBJ188A-TR DO-214AA) diode smd marking BUF smd diode code buh diode smd marking "BBE" diode smd marking BUE diode smd marking BBf smd code buz smb smd code buh diode smd marking "BUF" diode smd marking BUA diode smd marking "BUE"

    diode smd marking BUF

    Abstract: marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510
    Text: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned


    Original     		PDF SMBJ188A-TR DO-214AA) diode smd marking BUF marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510

    marking code BBH

    Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
    Text: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these


    Original     		PDF SMA/DO214AC SMCJ20CA SMCJ22CA SMCJ24CA SMCJ26CA SMCJ28CA SMCJ30CA SMCJ33CA SMCJ40CA SMCJ48CA marking code BBH st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ

    Untitled

    Abstract: No abstract text available
    Text: TPS79718-EP, TPS79730-EP, TPS79733-EP www.ti.com SGLS348A – AUGUST 2006 – REVISED OCTOBER 2007 ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT FEATURES APPLICATIONS • • 1 • • • • • • • • • • • 1 Controlled Baseline


    Original     		PDF TPS79718-EP, TPS79730-EP, TPS79733-EP SGLS348A SC70/SOT-323

    MD80C31BH

    Abstract: 5962-8506401MQA 5962-8506401MQX 5962-8506402MMA MR80C31BH qml-38535 5962-8506401MXA 5962-8506403MQA mr80C31 MD80C31B
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED D Add device types 03 and 04. Add test circuit. Editorial changes throughout. 90-03-05 W. Heckman E Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman F Changes in accordance with NOR 5962-R323-92


    Original     		PDF 5962-R323-92 5962-R052-93 MIL-PRF-38535 MD80C31BH 5962-8506401MQA 5962-8506401MQX 5962-8506402MMA MR80C31BH qml-38535 5962-8506401MXA 5962-8506403MQA mr80C31 MD80C31B

    st smd diode marking code BUH

    Abstract: diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA
    Text: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE


    Original     		PDF SMBJ188A-TR DO-214AA) st smd diode marking code BUH diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA

    st smd diode marking code BUH

    Abstract: diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE st smd diode marking code BUZ diode smd marking BBf diode smd marking "BUF" diode code BUH
    Text: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE


    Original     		PDF SMBJ188A-TR DO-214AA) st smd diode marking code BUH diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE st smd diode marking code BUZ diode smd marking BBf diode smd marking "BUF" diode code BUH

    st smd diode marking code BUH

    Abstract: diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE
    Text: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE


    Original     		PDF SMBJ188A-TR DO-214AA) st smd diode marking code BUH diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE

    SMBJ5.0A DO214AA

    Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
    Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline


    Original     		PDF SMBJ188A-TR, DO-214AA) SMBJ5.0A DO214AA marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR

    st marking BBM code

    Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
    Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline


    Original     		PDF SMBJ188A-TR, DO-214AA) st marking BBM code bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR

    SMDA06

    Abstract: No abstract text available
    Text: TRANSZORB TVS DIODE ARRAY DA S E R IE S 8 AND 16 PIN DUAL-IN-LINE PA C K A G E DIP by David W. Hutchins Introduction Electrical Parameters The S M D A and D A family of transient voltage suppres­ sors (TVS) are designed for protection of multiple power


    OCR Scan     		PDF SMDA06 SMDA06C

    Payton

    Abstract: 27C1024 1am2
    Text: REVISIONS LTR DATE YR-MO-QA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE


    OCR Scan     		PDF 74MM/4OT11 5962-E1319 15962-8680502XX IAM27C1024-250/SUA 15962-8680503QX 1AM27C1024-200/BQA 15962-8680503XX 1AM27C1024-200/BUA 15962-8680504QX IAM27C1024-170/BQA Payton 27C1024 1am2

    Untitled

    Abstract: No abstract text available
    Text: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C


    OCR Scan     		PDF IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S)

    Untitled

    Abstract: No abstract text available
    Text: IRF710A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 3 .6 Q lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA(M ax.) @ VDS = 400V


    OCR Scan     		PDF irf710a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS12VS-5 HIGHSPEED SWITCHING USE ¡ FS12VS-5 • V oss . 2 5 0 V • rDS ON (MAX) . 0 . 4 0 Q


    OCR Scan     		PDF FS12VS-5

    Untitled

    Abstract: No abstract text available
    Text: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V


    OCR Scan     		PDF IRFM110A D03h3E3

    JIS Z 1522 tape

    Abstract: sot-223 body marking A G Q E AN-994 IRFL210 TS10B
    Text: PD-9.868 International jog Rectifier IRFL210 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 - 5 0


    OCR Scan     		PDF IRFL210 OT-223 50KIJ JIS Z 1522 tape sot-223 body marking A G Q E AN-994 TS10B

    SIEMENS THYRISTOR bst

    Abstract: Thyristor bst 2 thyristor BSt
    Text: SIEMENS TEMPFET BTS 132 Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type VDS I0 BTS 132 60 V 24 A ^DS on 0.065 Cl 1 2 3 G D S Package


    OCR Scan     		PDF O-220AB C67078-A5003-A4 A23sb0s fl235LD5 BTS132 fl23Sb05 SIEMENS THYRISTOR bst Thyristor bst 2 thyristor BSt

    27C1024

    Abstract: 44-Terminal
    Text: REVISIONS LTR DATE YR-MO-QA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 11 12 SHEET PMIC N/A A M S C N/A MICROCIRCUITS, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON DRAWING APPROVAL,/ 26 MAY 1989 SIZE CAGE CODE A 67268


    OCR Scan     		PDF -1M/40911 5962-E1319 Manu680503QX 1AM27C1024-200/BQA 15962-8680503XX 1AM27C1024-200/BUA I5962-8680504QX IAM27C1024-170/BQA 15962-8680504XX 7C1024-170/BUA 27C1024 44-Terminal

    MD80C31BH

    Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device types 03 and 04. Add test circuit. Editorial changes thougout. 90-03-05 W. Heckman Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman Changes in accordance with NOR 5962-R323-92


    OCR Scan     		PDF 5962-R323-92 5962-R052-93 MD80C31BH 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416

    bbc ds diodes DS 1,8

    Abstract: diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA
    Text: S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e * S S M B J 1 8 8 A -T R ,C A -T R œ @ [ E L [ iO TRANS IL FEATURES • PEAK PULSE POWER: 600 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR


    OCR Scan     		PDF DO-214AA) bbc ds diodes DS 1,8 diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA

    ud 1803 IC

    Abstract: L3947 C12761
    Text: r Z 7 S G S -T H O M S O N * > J f. L9947 K ilD Iê lS la lIL iO T O M lê i QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVER PRODUCT PREVIEW • LOW CONSUMPTION IN STANDBY MODE <1 00mA AT ROM TEMP; < 150jiA AT 1 3 0 ^ . TWO HALF BRIDGES FOR 3A LOAD (R d s o n = 0.25Q TYP; Tj = 25°C)


    OCR Scan     		PDF L9947 150jiA L9947 L9947S MULTIWATT15 ud 1803 IC L3947 C12761

    ac297

    Abstract: ac296 TC74ACT646P TC74ACT648P
    Text: TC74ACT646P, TC74ACT648P O C T A L BU8 T R A N S C E IV E R /R E G IS T E R TC74ACT846P N O N -IN V E R T IN G TC74ACT648P I N V E R T I N G _ The TC74ACT646/ACT648 are advanced high speed CMOS OCTAL BUS TRANSCEIVER/REGISTERb fabricated with silicon gate and dovble-layer metal wiring C2MOS


    OCR Scan     		PDF TC74ACT646P, TC74ACT648P TC74ACT846P TC74ACT648P TC74ACT646/ACT648 TC74ACT646 Ta-25 50/xA -75mA* 50//A ac297 ac296 TC74ACT646P