BUK627 Search Results

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

BUK627-450B

Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • bbS3T31 OQSObSS PowerMOS transistor Fast Recovery Diode FET b BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK627-450B

Abstract: tic 120 TIC 220
Contextual Info: N A ME R PHILIPS/DISCRETE 2 SE D • bbS3T31 OQSObSS PowerMOS transistor Fast Recovery Diode FET b ■ BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

BUK627-600A

Abstract: BUK627-600B BUK627-600C
Contextual Info: N AMER PHILIPS/ DIS CRETE 2SE D WÊ DOSGbbS T m PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a p[astic envelope. FREDFET with fast recovery

Contextual Info: 25E D N AUER PHILIPS/DISCRETE • tb53ci31 002DbbS 1 PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C r - 2 7 - i i GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

Contextual Info: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

cf rh transistor

Abstract: BUK627-600A BUK627-600B BUK627-600C T-39-1J Ti34
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D WÊ bb53T31 DOSGbbS PowerMOS transistor Fast Recovery Diode FET ^ BUK627-600A BUK627-600B BUK627-600C r-37- GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

500c t2

Abstract: BUK627-500A BUK627-500B BUK627-500C
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK627-400A

Abstract: BUK627-400B
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^ 5 3 = 1 3 1 0 0 2 0 b S 0 7 Bi PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General

BUK627-500A

Abstract: BUK627-500B BUK627-500C
Contextual Info: N AMER PHILIPS/DISCRETE SSE D m b b 5 3 c131 GD2Gbba P o w erM O S tra n s isto r Fast R ecovery D iode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40