BUK657 Search Results

buk657-500

Abstract: BUK657-500B T0220AB transistor D 588
Contextual Info: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AMER PHILIPS/DISCRETE • SSE D ^53=131 002070S t> ■ PowerMOS transistor Fast Recovery Diode FET BUK657-450B r - 3^-13 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK657-600A

Abstract: BUK657-600C 600B BUK657 BUK657-600B T0220AB buk657-600 Y485
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK657-600A BUK657-600B BUK657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-eifect power transistor in a

BUK657-400B

Abstract: diode,FET
Contextual Info: N AMER PHILIPS/DISCRETE t.'îE D bbsa'ïai 0030ÔAS r i i « a p x Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

BUK657-500A

Abstract: BUK657-500B BUK657 BUK657-500C T0220AB buk657-500 r gb 489
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • 0D2071D T ■ PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: N AMER P H IL IP S /D IS C R E T E fc>3E D • LLS3331 0030flflS 311 H A P X Product Specification Philips Sem iconductors BUK657-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK657-450B

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK657

Abstract: BUK657-400A BUK657-400B T0220AB IRF FET
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK657-400A

Abstract: BUK657-400B BUK657 T0220AB 40QA
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D m ^ 5 3 = 3 3 1 □□ 2 0 7 0 Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

diode T-71

Abstract: BUK657-400B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK657-400B

Abstract: transistor ZA 16
Contextual Info: L.'IE T> N AMER PHILIPS/DISCRETE LLSa'ïai DD3DÔÔS 111 • APX Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

BUK657

Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK657-500B

Abstract: et 25 diode
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery

BUK657-500C

Contextual Info: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Transistor 5331

Abstract: BUK657-450B T0220AB Trt-100 transistor ZA 16
Contextual Info: N AMER PH ILI PS/D IS CR ET E SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK657

Abstract: BUK657-600A BUK657-600B BUK657-600C T0220AB tg 25 600b
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ P o w erM O S tra n s is to r Fast R eco very D io de F E T B U K 657-600A B U K 657-600B B U K 657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode

BUK445-100A

Abstract: BUK445-600B
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP

BUK657-600A

Contextual Info: ^53=131 D0E071S 1 • 5SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r F ast R ec o v e ry D io d e F E T B U K 657-600A B U K 657-600B B U K 657-600C G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode

Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a