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    NXP Semiconductors BUK9508-55A,127

    MOSFET N-CH 55V 75A TO220AB
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    Nexperia BUK9508-55B,127

    MOSFET N-CH 55V 75A TO220AB
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    NXP Semiconductors BUK9508-55B,127

    BUK9508-55B - Power Field-Effect Transistor, SIL3P '
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    Rochester Electronics BUK9508-55B,127 16 1
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    BUK9508 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUK9508-55 Philips Semiconductors TrenchMOS Transistor Logic Level FET Original PDF
    BUK9508-55 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK9508-55A Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9508-55A Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF
    BUK9508-55A,127 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 75A TO220AB Original PDF
    BUK9508-55B NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9508-55B Philips Semiconductors Trenchmos logic level FET Original PDF
    BUK9508-55B,127 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9508-55B,127 NXP Semiconductors BUK9508-55 - TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF

    BUK9508 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BUK9508

    Abstract: BUK9508-55B BUK95
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B transistor BUK9508 BUK9508-55B BUK95

    Untitled

    Abstract: No abstract text available
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PHD78NQ

    Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


    Original     		PDF

    BUK950

    Abstract: BUK9508-55 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A

    45118

    Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118

    SMD fet MARKING 34

    Abstract: transistor smd code marking nc g TRANSISTOR SMD mos fet
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) conventiPHB125N06LT PHP125N06LT PHB125N06LT SMD fet MARKING 34 transistor smd code marking nc g TRANSISTOR SMD mos fet

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 BUK9508-55

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BUK9508-55

    Abstract: BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 BUK9608-55 BUK9508-55 BUK9608-55

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Transistor SMD SOT363 SC70

    Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
    Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    BUK9508-55A

    Abstract: No abstract text available
    Text: AN11243 Failure signature of electrical overstress on power MOSFETs Rev. 01 — 29 October 2012 Application note Document information Info Content Keywords Power MOSFETs, Electrical Overstress EOS , Unclamped Inductive Switching (UIS) Abstract When Power MOSFETs fail, there is often extensive damage. Examination


    Original     		PDF AN11243 BUK9508-55A

    BUK9508-55

    Abstract: PHB125N06LT 4100us
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us

    PSMN015-60PS

    Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
    Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


    Original     		PDF OT404) PHB66NQ03LT OT428) PHD38N02LT PH2520U OT163 PSMN015-60PS BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN

    TEA1620

    Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
    Text: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of


    Original     		PDF

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Text: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


    Original     		PDF 1N4148 1N4531 1N47xxA 1PS10SB62 1PS10SB63 1PS10SB82 1PS181 1PS184 1PS193 1PS226 BUK2114 BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52

    BUK9E08-55b

    Abstract: BUK9508-55B BUK9608-55B
    Text: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/96/9E08-55B OT404, OT226 BUK9E08-55b BUK9508-55B BUK9608-55B

    transistor D 982

    Abstract: gis 110 kv
    Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		PDF BUK9508-55 T0220AB transistor D 982 gis 110 kv

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    S25 zener diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode