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    BUK9607-30B Search Results

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    BUK9607-30B Price and Stock

    NXP Semiconductors BUK9607-30B,118

    Trans MOSFET N-CH 30V 108A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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    Verical BUK9607-30B,118 900 683
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    Rochester Electronics BUK9607-30B,118 1,087 1
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    BUK9607-30B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BUK9607-30B
    		NXP Semiconductors BUK9607-30B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 13 nC; RDS(on): 5@10V7@5V9@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V Original PDF 189.73KB 14
    BUK9607-30B
    		Philips Semiconductors Original PDF 107.92KB 15
    BUK9607-30B,118
    		NXP Semiconductors BUK9607-30 - TRANSISTOR 108 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power Original PDF 189.73KB 14
    BUK9607-30B,118
    		NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 13 nC; RDS(on): 5@10V7@5V9@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V; Package: SOT404 (D2PAK); Container: Tape reel smd Original PDF 107.91KB 15
    BUK9607-30B/T3
    		NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 13 nC; RDS(on): 5@10V7@5V9@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V Original PDF 107.91KB 15