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    BUK9608 55B Search Results

    BUK9608 55B Datasheets (5)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUK9608-55B
    		NXP Semiconductors BUK9608-55B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V Original PDF 161.33KB 14
    BUK9608-55B
    		Philips Semiconductors Trenchmos logic level FET Original PDF 115.15KB 16
    BUK9608-55B,118
    		NXP Semiconductors BUK9608-55 - TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power Original PDF 180.93KB 14
    BUK9608-55B,118
    		NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd Original PDF 115.13KB 16
    BUK9608-55B/T3
    		NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V Original PDF 115.13KB 16
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    BUK9608 55B Price and Stock

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    Nexperia BUK9608-55B,118

    Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK9608-55B,118)
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    Avnet Americas BUK9608-55B,118 Reel 111 Weeks 4,800
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    Verical BUK9608-55B,118 42,400 273
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    Newark BUK9608-55B,118 Cut Tape 1
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    Rochester Electronics BUK9608-55B,118 42,400 1
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    TME BUK9608-55B,118 1
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    Others BUK960855B

    AVAILABLE EU
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    ComSIT USA BUK960855B 5,400
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    NXP Semiconductors BUK9608-55B,118

    Transistors
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    Vyrian BUK9608-55B,118 5,790
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    BUK9608 55B Datasheets Context Search

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    BUK95

    Abstract: BUK9608-55B
    Contextual Info: BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55B BUK95 BUK9608-55B PDF

    Contextual Info: BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55B PDF