BUK9E06-55A |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET |
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Original |
PDF
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190.01KB |
14 |
BUK9E06-55A |
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Philips Semiconductors
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TrenchMOS logic level FET |
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Original |
PDF
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132.28KB |
16 |
BUK9E06-55A,127 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack |
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Original |
PDF
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132.27KB |
16 |
BUK9E06-55A,127 |
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NXP Semiconductors
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BUK9E06-55A - N-channel TrenchMOS logic level FET, SOT226 Package, Standard Marking, Horizontal, Rail Pack |
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Original |
PDF
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186.94KB |
14 |