Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUP 311D Search Results

    BUP 311D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM311DE4
    Texas Instruments High Speed, 30V, Differential Comparator With Strobes 8-SOIC 0 to 70 Visit Texas Instruments Buy
    LM311DG4
    Texas Instruments High Speed, 30V, Differential Comparator With Strobes 8-SOIC 0 to 70 Visit Texas Instruments Buy
    TPA311DR
    Texas Instruments 350-mW Mono Class-AB Audio Amplifier 8-SOIC Visit Texas Instruments Buy
    BQ24311DSGR
    Texas Instruments Overvoltage and Overcurrent Protection Li+ Charger Front-end Protection IC 8-WSON -40 to 85 Visit Texas Instruments Buy
    TCA4311D
    Texas Instruments Hot swappable 2-wire bus buffers 8-SOIC -40 to 85 Visit Texas Instruments

    BUP 311D Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUP311D
    Infineon Technologies 12A 1200V TO218AB IGBT + Diode Original PDF 80.14KB 9
    BUP311D
    Infineon Technologies IGBT Chip, 1200V, TO-218AB, 3-Pin Original PDF 70.83KB 9

    BUP 311D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    311D

    Abstract: bup 311d
    Contextual Info: BUP 311D Infineon IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A


    Original
    O-218 C67078-A4102 May-06-1999 311D bup 311d PDF

    bup 311d

    Abstract: 311d BUP311D May-06-1999
    Contextual Info: BUP 311D IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A Pin 1


    Original
    O-218 May-06-1999 bup 311d 311d BUP311D May-06-1999 PDF

    bup 311d

    Abstract: bup212 igbt to220 311D SIGC16T120C
    Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, bup 311d bup212 igbt to220 311D SIGC16T120C PDF

    TO220 package infineon

    Abstract: 311D SIGC16T120C BUP311D bup 311d
    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, TO220 package infineon 311D SIGC16T120C BUP311D bup 311d PDF

    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  short circuit prove  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 311D /BUP 212 C Applications:  drives G Chip Type VCE


    Original
    SIGC16T120C L7131MM, PDF

    bup212

    Abstract: SIGC16T120C BUP 200 application
    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  short circuit prove  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 311D /BUP 212 C Applications:  drives G Chip Type VCE


    Original
    SIGC16T120C L7131MM, bup212 SIGC16T120C BUP 200 application PDF

    311D

    Abstract: A003 SIGC16T120C bup212
    Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original
    SIGC16T120C Q67041-A4673sawn 7131-M, 311D A003 SIGC16T120C bup212 PDF

    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF