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    bosch piezoelectric sensor

    Abstract: Piezoelectric Sensor heart UAA 180 air mass bosch amplifier for piezo sensor impact sensor Piezo sensor Bosch Piezoelectric sensor block diagram piezoelectric pressure charge amplifier
    Contextual Info: 18 Acceleration sensors BOSCH Piezoelectric acceleration sensors Measurement of acceleration up to 35g 7 / O ’ I I 2> - o - 1 3 L ^ 5 ^ • Acceleration measurement by means of piezoelectric spring element bimorphous strips • Low temperature-dependence


    OCR Scan     		PDF

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR330DP 2002/95/EC SiR330DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR482DP 2002/95/EC SiR482DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR482DP 2002/95/EC SiR482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original     		Si7784DP Si7784DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR330DP 2002/95/EC SiR330DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original     		Si7784DP Si7784DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiR496DP

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIS426DN-T1-GE3

    Abstract: SiS426DN
    Contextual Info: New Product SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V g VDS (V) 20 35 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested


    Original     		SiS426DN SiS426DN-T1-GE3 150lectual 18-Jul-08 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 18-Jul-08 PDF

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 18-Jul-08 PDF

    SiR496DP

    Contextual Info: New Product SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 Qg (Typ.) 13.2 nC S COMPLIANT • High Current DC/DC - Low-Side Switch • POL


    Original     		SiR496DP SiR496DP-T1-GE3 18-Jul-08 PDF

    MA 68698

    Abstract: Si7718DN
    Contextual Info: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL


    Original     		Si7718DN Si7718DN-T1-GE3 18-Jul-08 MA 68698 PDF

    Si7784DP

    Abstract: SI7784DP-T1-GE3 SI778
    Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original     		Si7784DP Si7784DP-T1-GE3 18-Jul-08 SI778 PDF

    SiR496DP

    Contextual Info: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR496DP 2002/95/EC SiR496DP-T1-GE3 11-Mar-11 PDF

    Si7784DP

    Abstract: Si7784DP-T1-GE3 si7784
    Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original     		Si7784DP Si7784DP-T1-GE3 11-Mar-11 si7784 PDF

    Si7718DN

    Abstract: si7718
    Contextual Info: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL


    Original     		Si7718DN Si7718DN-T1-GE3 11-Mar-11 si7718 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 11-Mar-11 PDF