BUY 1A 60V PNP Search Results

BUY 1A 60V PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

BUY 1A 60V PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER	Original	BD240/A/B/C BD239/A/B/C O-220 BD240 BD240A BD240B BD240C	PDF
Contextual Info: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter	Original	KSB794/795 O-126 KSB794 KSB795 PW300 Cycle10% KSB795OSTU	PDF
Contextual Info: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter	Original	KSB794/795 O-126 KSB794 KSB795 KSB794OSTU /new/html/KSB794	PDF
OF TRANSISTOR AT 30B Contextual Info: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B	PDF
TRANSISTOR MARKING 1d9 Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications	Original	ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA	PDF
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications	Original	ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541	PDF
Contextual Info: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction	Original	FMMT591 500mW FMMT491 FMMT591TA D-81541	PDF
FMMT591TA Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp Contextual Info: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction	Original	FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp	PDF
ZXTP19060CG Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor	Original	ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA	PDF
ZXTN19060CZ Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA Contextual Info: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor	Original	ZXTP19060CZ -80mV ZXTN19060CZ ZXTP19060CZTA D-81541 ZXTN19060CZ TS16949 ZXTP19060CZ ZXTP19060CZTA	PDF
fast switching pnp transistor 3A 60V Abstract: bd241 BD242 Contextual Info: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER	Original	BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C fast switching pnp transistor 3A 60V bd241 BD242	PDF
"PNP Transistor" Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	ZX5T951Z "PNP Transistor" design ideas TS16949 ZX5T951Z ZX5T951ZTA	PDF
Contextual Info: TIP32 Series TIP32/32A/32B/32C TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	TIP32 TIP32/32A/32B/32C) TIP31/31A/31B/31C O-220 TIP32 TIP32A TIP32B TIP32C	PDF
transistor BD 325 Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD234/236/238 O-126 BD234 BD236 BD238 transistor BD 325	PDF

BD376 Abstract: TO-126 fairchild BD375 BD37810STU Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 O-126 BD376 TO-126 fairchild BD375 BD37810STU	PDF
TRANSISTOR MARKING 1d9 Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications	Original	ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA	PDF
ZXTN2 Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to	Original	ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 ZXTN2	PDF
TS16949 Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to	Original	ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA	PDF
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to	Original	ZXTP2027F -100V, ZXTN2018F D-81541	PDF
TS16949 Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to	Original	ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA	PDF
Contextual Info: BDW24/A/B/C BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW23, BDW23A, BDW23B and BDW23C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BDW24/A/B/C BDW23, BDW23A, BDW23B BDW23C O-220 BDW24 BDW24A BDW24B	PDF
KSB1116 Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50% KSB1116	PDF
Contextual Info: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50%	PDF
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 BD180	PDF

BUY 1A 60V PNP Search Results

BUY 1A 60V PNP Result Highlights (5)

BUY 1A 60V PNP Datasheets Context Search

OF TRANSISTOR AT 30B

TRANSISTOR MARKING 1d9

FMMT591TA

ZXTP19060CG

ZXTN19060CZ

fast switching pnp transistor 3A 60V

"PNP Transistor"

transistor BD 325

BD376

TRANSISTOR MARKING 1d9

ZXTN2

TS16949

TS16949

KSB1116