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    BUZ,271 Price and Stock

    Siemens BUZ271

    P-CHANNEL ENHANCEMENT IGBT TO-220 Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA BUZ271 80
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    BUZ,271 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BUZ271
    		Infineon Technologies SIPMOS Power Transistor Original PDF 130.18KB 9
    BUZ271
    		Siemens Original PDF 1.09MB 7
    BUZ271
    		Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    BUZ271
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 120.74KB 1
    BUZ271
    		Siemens SIPMOS Power Transistor Scan PDF 302.04KB 6