BUZ 32 SMD Search Results

smd rgs

Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Contextual Info: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter

A4t 29 smd

Abstract: smd a4t
Contextual Info: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C

C67078-S1353-A2

Contextual Info: BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

104L

Abstract: C67078-S1358-A2
Contextual Info: BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

Q67040-S4009-A2

Abstract: SPP31N05 BUZ 32 SMD
Contextual Info: BUZ 103 S SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V

transistor SMD t70

Abstract: BUZ104
Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

Q67040-S4008-A2

Abstract: SPP28N05L EAS120
Contextual Info: BUZ 103 SL SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

Contextual Info: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current

transistor buz 36

Abstract: BUZ 81 KS57C21632 KS57P21632 SAM47
Contextual Info: KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the KS57C21632 offers an

c4204

Abstract: C4304 transistor c4204 KS57C4104 KS57C4204 KS57C4304 SAM47
Contextual Info: KS57C4104/P4104/C4204/P4204/C4304/P4304 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C4104/KS57C4204/KS57C4304 single-chip CMOS microcontroller has been designed for very high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontroller .

transistor buz 36

Abstract: S3C72G9 S3P72G9 SAM47
Contextual Info: S3C72G9/P72G9 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C72G9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the S3C72G9 offers an

Contextual Info: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter

4 MHz Oscillator

Abstract: transistor buz 36 SAM47 KS57C2916 KS57P2916
Contextual Info: KS57C2916/P2916 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C2916 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the KS57C2916 offers an

BUZ104S

Abstract: 104S E3045 Q67040-S4007-A2 12J8
Contextual Info: BUZ 104S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175 ˚C operating temperature

4 MHz Oscillator

Abstract: BUZ 72 A S3C7295 S3P7295 SAM47
Contextual Info: S3C7295/P7295 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7295 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the S3C7295 offers an

103S

Abstract: BUZ103S E3045 Q67040-S4009-A2
Contextual Info: BUZ 103S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.036 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 31 A • dv/dt rated • 175 ˚C operating temperature

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

KS57C5116

Abstract: p5116s P5116 KS57-series KS57P5116 SAM47
Contextual Info: KS57C5116/P5116 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C5116/P5116 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . The KS57P5116 is a

Contextual Info: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings

Contextual Info: BUZ 72AL Infineon te c h n o lo g ie s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V^s BUZ 72 AL 100 V 9A flDS on Package Ordering Code 0.25 n TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol