BUZ 353 Search Results

Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type Yds b flDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vt)S Drain-gate voltage ^DGR Values

Contextual Info: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vds 1000 V Id 2.3 A ^DS on Package Ordering Code 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Values

FESS 006

Abstract: 351-07 A1307 C67078-A1307-A5 M20D buz 353 siemens 350 98 O
Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vbs 1000 V b wDS on Package Ordering Code 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vtis Drain-gate voltage ^DGR Values

Contextual Info: SIEMENS BUZ 11 AL Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 11 AL Vbs 50 V b 26 A ^DS on 0.055 n Package Ordering Code TO-220 AB C67078-S1330-A3 Maximum Ratings Symbol Parameter

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 70 L • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS Id ^DS on Package 1> Ordering Code BUZ 70 L 60 V 12 A 0.15 Q TO-220 AB C67078-S1325-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 "C

49nF

Contextual Info: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics

buz 353

Abstract: DIODE S45 BUZ353 C67078-A3104-A2 IEC68-1
Contextual Info: öflD D • fl23Sfc.05 GD1S035 3 « S I E G SIEMENS AKTIEN6ESELLSCHAF 3 t f "/3 Main ratings BUZ 353 N-Channel = 500 V Drain-source voltage l'os = 9,5 A Continuous drain current h Drain-source on-resistance ^DS on = 0 ,6 « Description SIPMOS, N-channel, enhancement mode

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
Contextual Info: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current

si1329

Contextual Info: ÖÖD D • fl23Sfc.05 GD1S035 3 « S I E G SIEMENS AKTIEN6ESELLSCHAF ~T~3 e?"/3 Main ratings Drain-source voltage C ontinuous drain current Drain-source on-resistance Description Case BUZ 353 N-Channel l'os h ^ D S o n a 500 V = 9,5 A = 0,6 Ì Ì SIPMOS, N-channel, enhancement mode

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

tda 6109

Abstract: V23100-V7228-F110 B32650 V23100-V7213-F104 V23100-W1224-A104 V23082-A1005-A401 V23108-A1003-B101 V23104-A1003-B101 V23100-V7228-F104 B32110-F
Contextual Info: Katalognummern-Referenz: SCHURICHT-Nummern ⇔ SIEMENS-Nummern Da im Katalog aus drucktechnischen Gründen die Siemensnummern oft nicht zusammenhängend – sondern in Produktgruppen- und Einzelexemplar-Teil aufgetrennt – dargestellt sind, finden Sie hier in einer großen Tabelle für jedes Bauteil die SCHURICHT- und die SIEMENS-Nummern

IRFP 740

Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

smd ks4

Abstract: smd p9 10-10 C5308 c5304 KS57C5204 KS57C5208 KS57C5304 KS57C5308 KS57C5312 KS57P5208
Contextual Info: OVERVIEW 1 PRODUCT OVERVIEW OVERVIEW The KS57C5204/C5208/C5304/C5308/C5312 single-chip CMOS microcontroller has been designed for highperformance using SAM 47 Samsung Arrangeable Microcontrollers . SAM 47, Samsung's newest 4-bit CPU core

Contextual Info: NEC 1. ltP D 7 5 3 1 2 A , 7 5 3 1 6 (A ) PIN CONFIGURATIOrPTop V iew ) CD LO i_ cr cr cr LLJ W 00 CNJ < lu CO c o c oc o c o c ococococococo cr Cl Cl Cl ill 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 1 P70/KR4 64 63 •*-+Q P63/KR3 62 P62/KR2 61 P61/KR1

KS57C21408

Abstract: S3C72E8 S3P72E8 SAM47 SEG40 4 12 digit lcd display for watch
Contextual Info: S3C72E8/P72E8 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C72E8/P72E8 is a SAM47 core-based 4-bit CMOS single-chip microcontroller. It has a timer/counter and LCD drivers. The S3P72E8 is especially suited for use in data bank, telephone and LCD general purpose.

4.19MHz crystal

Abstract: KS57C21408 KS57C21418 KS57P21408 SAM47 SEG40 419 mhz oscillator 4pin 4.19MHz crystal tdk
Contextual Info: KS57C21408/C21418/P21408 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21408/C21418/P21408 is a SAM47 core-based 4-bit CMOS single-chip microcontroller. It has a timer/counter and LCD drivers. The KS57P21408 is especially suited for use in data bank, telephone and LCD general purpose.

KS57C5016

Abstract: P30C NTE100
Contextual Info: 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C5016 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core and the SAM4 product development approach Samsung Arrangeable Microcontrollers . With its

OM5178

Abstract: smd 2t1 equivalent type smd philips gmsk vhdl code to generate sine wave BUZAMP verilog code for GSM transmitter DCS1800 LQFP48 PCF50732 PCF50732H
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF50732 Baseband and audio interface for GSM Objective specification File under Integrated Circuits, IC17 1999 May 03 Philips Semiconductors Objective specification Baseband and audio interface for GSM CONTENTS PCF50732 14 LIMITING VALUES

KS57C5016

Contextual Info: K S57C 5016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C5016 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core and the SAM4 product development approach Samsung Arrangeable Microcontrollers . With its